DDTCxxxxLP (R1≠R2 Series) PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Part Number DDTC123JLP DDTC143ZLP DDTC114YLP R1 (NOM) 2.2K 4.7K 10K Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: Collector Dot (See Diagram and Marking Information) Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.0009 grams (approximate) • • • R2 (NOM) 47K 47K 47K • • • 3 C 2 3 C R1 R2 1 IN E C B 1 2 B 3 E 1 OUT IN R1 R2 GND OUT B E 2 GND Bottom View Maximum Ratings Package Pin Out Configuration Device Schematics @TA = 25°C unless otherwise specified Characteristic Supply Voltage Input Voltage Output Voltage P/N Symbol VCC DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP Value 50 -5 to +12 -5 to +30 -5 to +40 100 100 70 100 VIN IO Maximum Collector Current IC(MAX) Unit V V mA mA Thermal Characteristics Characteristic Power Dissipation (Note 3) Power Deration above 25 °C Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of NPN) Operating and Storage Temperature Range Notes: 1. 2. 3. Symbol PD Pder Value 250 2 Unit mW mW/°C RθJA 500 °C/W TJ, TSTG -55 to +150 °C No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 6 or our website at http://www.diodes.com/datasheets/ap02001.pdf. DDTCxxxxLP (R1≠R2 Series) Document number: DS30755 Rev. 7 - 2 1 of 7 www.diodes.com March 2009 © Diodes Incorporated DDTCxxxxLP (R1≠R2 Series) Electrical Characteristics Characteristic Off Characteristics (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage * Collector Cutoff Current * Base Cutoff Current (IBEX) Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Input-Off Voltage On Characteristics (Note 4) Base-Emitter Turn-On Voltage* Base-Emitter Saturation Voltage* @TA = 25°C unless otherwise specified P/N DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP Input-On Voltage Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL ICBO ICEO IEBO VI(OFF) 50 50 4.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 0.5 0.5 0.5 0.5 0.5 V V V μA μA μA μA mA V VO(ON) ΔR1 Δ (R2/R1) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.1 ⎯ ⎯ ⎯ 50 70 125 150 180 ⎯ ⎯ ⎯ -30 -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.85 0.85 0.95 0.98 0.998 0.98 ⎯ 7.2 1.5 7.2 ⎯ ⎯ ⎯ ⎯ ⎯ 0.15 0.2 0.3 30 -20 fT ⎯ 250 ⎯ VBE(ON) VBE(SAT) VI(ON) DDTC123JLP DDTC143ZLP DDTC114YLP Input Current DC Current Gain II hFE Collector-Emitter Saturation Voltage Output On Voltage (Same as VCE(SAT)) Input Resistor +/-30% Resistor Ratio Small Signal Characteristics Transition Frequency (gain bandwidth product) VCE(SAT) Test Condition IC = 10μA, IE = 0 IC = 2mA, IB = 0 IE = 50μA, IC = 0 VCE = 50V, VEB(OFF) = 3.0V VCE = 50V, VEB(OFF) = 3.0V VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 100μA V VCE = 5V, IC = 2mA V IC = 10mA, IB = 1mA, VCE=5V V VO = 0.3V, IC = 5mA mA VI = 5V ⎯ ⎯ ⎯ ⎯ ⎯ V V VCE = 5V, IC = 1mA VCE = 5V, IC = 2mA VCE = 5V, IC = 5mA VCE = 5V, IC = 10mA VCE = 5V, IC = 50mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IJ = 2.5mA, IO = 50mA ⎯ ⎯ % % MHz VCE = 10V, IE = 5mA, f = 100MHz *Guaranteed by design Notes: 4. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 Typical Characteristics Curves @TA = 25°C unless otherwise specified PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 RθJA = 500°C/W 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DDTCxxxxLP (R1≠R2 Series) Document number: DS30755 Rev. 7 - 2 2 of 7 www.diodes.com March 2009 © Diodes Incorporated DDTCxxxxLP (R1≠R2 Series) Characteristics Curves of DDTC123JLP @TA = 25°C unless otherwise specified 350 IC/IB = 10 VCE = 5V TA = 150 °C 250 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 300 TA = 85 °C 200 TA = 25 °C 150 TA = -55 ° C 100 TA = 150 °C TA = 85 °C TA = 25 °C 50 TA = -55 ° C 0 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.15 IB = 3.5mA IB = 4.0mA IB = 4.5mA 2 IB = 5.0mA 1.8 0.12 VO = 0.3V IO = 5mA 1.6 VI(ON), INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (A) IB = 3.0mA 0.09 IB = 2.0mA 0.06 IB = 2.5mA IB = 1.5mA IB = 1.0mA 0.03 IB = 0.5mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0 -60 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector Emitter Voltage -30 0 30 60 90 120 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Typical Input Voltage vs. Ambient Temperature 30 VCE = 5V 3 TA = 25 °C 1.5 TA = -55 °C T A = 85 °C 0 TA = 150 °C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base Emitter Voltage vs. Collector Current Document number: DS30755 Rev. 7 - 2 24 21 18 15 12 9 T A = 25 °C 6 3 0.1 DDTCxxxxLP (R1≠R2 Series) IC/IB = 10 27 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE, BASE EMITTER VOLTAGE (V) 4.5 3 of 7 www.diodes.com 0 0.1 TA = -55 ° C TA = 150 °C TA = 85 °C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base Emitter Saturation Voltage vs. Collector Current March 2009 © Diodes Incorporated DDTCxxxxLP (R1≠R2 Series) Characteristics Curves of DDTC143ZLP @TA = 25°C unless otherwise specified 100 350 VCE = 5V VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC/IB = 10 T A = 150 °C 300 TA = 85 °C 250 200 TA = 25 °C 150 TA = -55 °C 100 10 1 T A = 150 °C 0.1 TA = 85 °C 50 TA = -55 °C 0 0.1 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Collector Emitter Saturation Voltage vs. Collector Current 0.05 15 0.04 12 VI(ON), INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical DC Current Gain vs. Collector Current 0.03 0.02 TA = 25 °C 9 6 3 0.01 TA = 25 °C T A = 150 °C T A = -55 °C 0 0 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 10 Typical Collector Current vs. Collector Emitter Voltage 10 30 27 VCE = 5V 8 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE, BASE EMITTER VOLTAGE (V) 9 7 6 5 4 3 2 1 TA = 85 °C 1 10 100 IC, OUTPUT CURRENT (mA) Fig. 11 Typical Input Voltage vs. Output Current TA = -55 °C 0 0.1 T A = 25 °C TA = 85 °C Document number: DS30755 Rev. 7 - 2 21 18 15 12 9 3 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Base Emitter Voltage vs. Collector Current DDTCxxxxLP (R1≠R2 Series) 24 6 T A = 150 °C 4 of 7 www.diodes.com IC/IB = 10 0 0.1 TA = 25 °C TA = -55 ° C TA = 150 °C TA = 85 °C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Base Emitter Saturation Voltage vs. Collector Current March 2009 © Diodes Incorporated DDTCxxxxLP (R1≠R2 Series) Characteristics Curves of DDTC114YLP @TA = 25°C unless otherwise specified 350 10 VCE = 5V IC/IB = 10 TA = 150 °C VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 300 TA = 85 °C 250 200 T A = 25 °C 150 TA = -55 °C 100 1 0.1 T A = 85 °C T A = 150 °C 50 T A = -55 °C 0 0.1 0.01 0.1 IB = 1.0mA IB = 0.9mA IB = 0.8mA IB = 0.7mA IB = 0.6mA IB = 0.5mA 1.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 14 Typical DC Current Gain vs. Collector Current IC, COLLECTOR CURRENT (A) 0.09 0.08 0.07 IB = 0.4mA 0.06 IB = 0.3mA 0.05 IB = 0.2mA 0.04 0.03 0.02 VO = 0.3V IO = 5mA 1.2 VI(ON), INPUT VOLTAGE (V) 0.1 T A = 25 °C IB = 0.1mA 0.9 0.6 0.3 0.01 0 0 -60 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 16 Typical Collector Current vs. Collector Emitter Voltage -30 0 30 60 90 120 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 Typical Input Voltage vs. Ambient Temperature 15 30 VCE = 5V 27 12 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE, BASE EMITTER VOLTAGE (V) 13.5 10.5 9 7.5 6 4.5 3 1.5 TA = 25 °C T A = -55 °C 0 0.1 TA = 150 °C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 18 Typical Base Emitter Voltage vs. Collector Current DDTCxxxxLP (R1≠R2 Series) Document number: DS30755 Rev. 7 - 2 24 21 18 15 12 9 5 of 7 www.diodes.com TA = 25 °C 6 3 TA = 85 °C IC/IB = 10 0 0.1 TA = -55 ° C T A = 150 °C TA = 85 °C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 19 Typical Base Emitter Saturation Voltage vs. Collector Current March 2009 © Diodes Incorporated DDTCxxxxLP (R1≠R2 Series) Ordering Information (Note 5) Case DFN1006-3 DFN1006-3 DFN1006-3 Part Number DDTC123JLP-7 DDTC143ZLP-7 DDTC114YLP-7 Notes: Packaging 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Nx = Product Type Marking Code: DDTC123JLP = N0 DDTC143ZLP = N1 DDTC114YLP = N2 Dot Denotes Collector, Pin 3 Nx Package Outline Dimensions A DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DDTCxxxxLP (R1≠R2 Series) Document number: DS30755 Rev. 7 - 2 6 of 7 www.diodes.com March 2009 © Diodes Incorporated DDTCxxxxLP (R1≠R2 Series) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DDTCxxxxLP (R1≠R2 Series) Document number: DS30755 Rev. 7 - 2 7 of 7 www.diodes.com March 2009 © Diodes Incorporated