DT014 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B D C D D G E S P G R H J K L M S N Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above Maximum Ratings Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 2.35 E 2.22 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm 25°C unless otherwise specified Symbol Value Drain-Source Voltage Characteristic VDSS 60 V Gate-Source Voltage VGSS ±20 V Note 1a Continuous Pulsed ID ±2.7 ±10 A Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Tj, TSTG -65 to +150 °C Symbol Value Unit RQJA 42 °C/W RQJC 12 °C/W Drain Current Maximum Power Dissipation Operating and Storage Temperature Range Unit Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Notes: the Note 1 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W. DS11602 Rev.C-4 1 of 4 DT014 Electrical Characteristics 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj =125°C IDSS — — — — 25 250 µA VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 2) VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250µA RDS (ON) — 0.18 0.2 W VGS = 10V, ID = 1.6A gFS — 2.0 — m VDS = 25V, ID = 1.6A Input Capacitance CISS — 155 — pF Output Capacitance COSS — 60 — pF Reverse Transfer Capacitance CRSS — 15 — pF Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 10 20 ns Turn-On Rise Time tr — 64 100 ns Turn-Off Delay Time tD(OFF) — 10 20 ns Turn-Off Fall Time tf — 10 20 ns Total Gate Charge Qg — 5.0 11 nC Gate-Source Charge Qgs — 1.2 3.1 nC Gate-Drain Charge Qgd — 2.0 5.8 nC 2.7 A 22 A 1.6 V VGS = 0V, IS = 2.7A 140 ns VGS = 0V, IF = 10A dlF / dt = 100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS — — Forward Current Max Pulsed Drain-Source Diode ISM — — Forward Current Drain-Source Diode Forward Voltage VSD — 0.95 (Note 2) Reverse Recovery Time Notes: trr — — VDD = 30V, ID = 10A VGEN = 10V, RGEN = 24W VDS = 48V. ID = 10A. VGS = 10V 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. DS11602 Rev.C-4 2 of 4 DT014 ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 8.0 7.0 6 6.5 4 6.0 5.5 2 5.0 4.5 0 0 1 2 3 6.0 6.5 7.0 2.0 8.0 1.5 10 1.0 0.5 0 2 4 8 6 10 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage & Drain Current VDS = 10V TJ = -55 C 125 8 1.6 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 5.5V 10 ID = 1.6A VGS = 10V 1.8 2.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 1.4 1.2 1.0 0.8 25 6 4 2 0.6 0.4 -50 -25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature DS11602 Rev.C-4 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics 3 of 4 DT014 20 ID, DRAIN CURRENT (A) 10 10 1m 0 s s IT 10 m s M LI 10 0m s O S( RD N) 1.0 1s 10 s 0.1 0.01 0.1 1.0 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.05 0.02 P(pk) 0.01 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design. DS11602 Rev.C-4 4 of 4 DT014