HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features · · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 6 5 4 Mechanical Data · · Case: SOT-363 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking & Type Code Information: See Page 7 1 2 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 3 Fig. 1: SOT-363 Terminal Connections: See Fig. 2 Terminals: Finish ¾ Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Ordering Information: See Page 7 CQ1 EQ1 EQ2 Weight: 0.016 grams (approximate) Q1 MMBT2907A Q2 MMBTA06 BQ1 Sub-Component P/N Reference Device Type Figure MMBT2907A_DIE Q1 PNP Transistor 2 MMBTA06_DIE Q2 NPN Transistor 2 Maximum Ratings: Total Device BQ2 CQ2 Fig. 2: Schematic & Pin Configuration @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Pd 200 mW Thermal Resistance, Junction to Ambient Air (Note 3) RqJA 625 °C/W Operating and Storage Junction Temperature Range VEBO -55 to +150 °C Power Dissipation (Note 3) Maximum Ratings: Sub-Component Devices @ TA = 25°C unless otherwise specified Symbol Q1-PNP Transistor (MMBT2907A) Q2-NPN Transistor (MMBTA06) Unit Collector-Base Voltage VCBO -60 80 V Collector-Emitter Voltage VCEO -60 65 V Emitter-Base Voltage VEBO -5.5 6 V IC -600 500 mA Characteristic Collector Current - Continuous (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 8 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30701 Rev. 2 - 2 1 of 8 www.diodes.com HBDM60V600W ã Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified PNP (MMBT2907A) Transistor (Q1): Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.5 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -10 nA VCB = -50V, IE = 0 Collector Cutoff Current ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 100 100 100 100 50 ¾ ¾ ¾ 300 ¾ ¾ ¾ ¾ ¾ ¾ IC = -100mA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.3 -0.5 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -0.95 -01.3 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA fT 100 ¾ MHz VCE = 2.0V, IC = 10mA, f = 100MHz Turn-On Time ton ¾ 45 ns Delay Time td ¾ 10 ns Rise Time tr ¾ 40 ns Turn-Off Time toff ¾ 100 ns Storage Time ts ¾ 80 ns Fall Time tr ¾ 30 ns OFF CHARACTERISTICS (Note 4) Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS ¾ VCE = -30V, IC = -150mA, IB1 = IB2 = -15mA ¾ VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA @ TA = 25°C unless otherwise specified Electrical Characteristics NPN (MMBTA06) Transistor (Q2): Symbol Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO 80 ¾ ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 65 ¾ ¾ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage Characteristic Test Condition OFF CHARACTERISTICS (Note 4) V(BR)EBO 6 ¾ ¾ V IE = 100mA, IC = 0 Collector-Base Cutoff Current ICBO ¾ ¾ 100 nA VCB = 80V, IE = 0 Collector Cutoff Current ICES ¾ ¾ 100 nA VCE = 90V, VBE = 0 Collector-Emitter Cutoff Current, IO(OFF) ICEO ¾ ¾ 100 nA VCE = 30V, IB = 0 Emitter-Base Cutoff Current IEBO ¾ ¾ 100 nA VEB = 5V, IC = 0 250 ¾ ¾ ¾ VCE = 1V, IC = 10mA 100 ¾ ¾ ¾ VCE = 1V, IC = 100mA ON CHARACTERISTICS (Note 4) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.2 0.4 V IC = 100mA, IB = 10mA Base-Emitter Turn-on Voltage VBE(ON) 0.7 0.75 0.8 V VCE = 1V, IC = 100mA Base-Emitter Saturation Voltage VBE(SAT) ¾ ¾ 0.95 V IC = 100mA, IB = 5mA fT 100 ¾ ¾ MHz VCE = 20V, IC = 10mA, f = 100MHz SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 4. Short duration pulse test used to minimize self-heating effect. DS30701 Rev. 2 - 2 2 of 8 www.diodes.com HBDM60V600W @ Tamb = 25°C unless otherwise specified NEW PRODUCT Typical Characteristics PD, POWER DISSIPATION (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve PNP (MMBT2907A) Transistor (Q1) Plots: 30 C, CAPACITANCE (pF) 20 Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 4 Typical Capacitance DS30701 Rev. 2 - 2 3 of 8 www.diodes.com HBDM60V600W VCE COLLECTOR-EMITTER VOLTAGE (V) NEW PRODUCT 1.6 1.4 IC = 300mA IC = 10mA IC = 100mA 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 5 Typical Collector Saturation Region 1000 VCE = 5V IC = 10 IB 0.5 TA = 150°C hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.6 0.4 0.3 TA = 150°C TA = 25°C 0.2 0.1 100 TA = 25°C TA = -50°C 10 TA = -50°C 0 1 10 1 1000 100 1 IC, COLLECTOR CURRENT (mA) Fig. 6 Collector Emitter Saturation Voltage vs. Collector Current 1.0 1000 VCE = 5V fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1000 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7 DC Current Gain vs Collector Current 0.9 TA = -50°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 TA = 150°C 0.3 VCE = 5V 100 0.2 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Base Emitter Voltage vs. Collector Current DS30701 Rev. 2 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Gain Bandwidth Product vs. Collector Current 4 of 8 www.diodes.com HBDM60V600W NPN (MMBTA06) Transistor (Q2) Plots: ICBO, COLLECTOR-BASE CURRENT (nA) NEW PRODUCT 10 VCB = 80V 1 0.1 0.01 25 50 75 100 125 TA, AMBIENT TEMPERATURE (ºC) Fig. 10 Typical Collector-Cutoff Current vs. Ambient Temperature VCE, COLLECTOR EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 IC = 30mA 1.2 IC = 10mA 1.0 0.8 0.6 IC = 100mA 0.4 IC = 1mA 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 11 Typical Collector Saturation Region 10000 VCE = 5V IC IB = 10 0.450 0.400 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.500 0.350 0.300 TA = 25°C 0.250 TA = 150°C 0.200 0.150 100 0.100 0.050 TA = 150°C 1000 TA = -50°C TA = 25°C 10 TA = -50°C 0 10 1 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Collector Emitter Saturation Voltage vs. Collector Current DS30701 Rev. 2 - 2 5 of 8 www.diodes.com 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 13 DC Current Gain vs Collector Current HBDM60V600W 1000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) NEW PRODUCT 1.0 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 VCE = 5V 100 10 1 0.1 1 0.1 10 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 15 Gain Bandwidth Product vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 14 Base Emitter Voltage vs Collector Current Circuit Schematic along with Application Example: 9V-12V HBDM60V600W 36 R1 HBDM60V600W EQ1 MMBT2907A R3 MMBT2907A C1 Q1 D1 BQ1 D2 Q1 BQ1 0 Q4 Q3 Half H-Bridge Motor Half H-Bridge CQ2 R5 1k R4 CQ1 CQ1 CQ2 M M B TA 0 6 R8 M M B TA 0 6 Q2 C2 D3 D4 BQ2 1k Q2 BQ2 EQ2 Reverse Forward 0 Fig. 16 Note: D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06) DS30701 Rev. 2 - 2 6 of 8 www.diodes.com HBDM60V600W NEW PRODUCT Application Example Schematic: (with Package Pinouts) 9V-12V R1 36 C1 U1 A1 NC C2 1 6 2 5 3 4 33k NC R3 A2 U2 MMBD4448DW BQ1 BQ2 U4 BQ1 R4 BQ2 470 CQ2 1 6 2 5 CQ2 Motor CQ1 EQ1 EQ2 3 4 HBDM60V600W Q1 R6 1k R2 C1 1 6 2 5 3 4 470 U3 EQ1 BQ2 1 CQ2 2 3 CQ1 EQ1 EQ2 INV5V0W HBDM60V600W C2 U5 A1 1 A2 2 A3 3 CQ1 6 BQ1 5 EQ2 4 R5 C1 6 C2 5 C3 4 1k MMBD4448HTW Reverse Forward Control Input 5V/0V Fig. 17 Ordering Information Notes: (Note 5) Device Packaging Shipping HBDM60V600W-7 HB01 3000/Tape & Reel 5. For Packaging Details, please go to page 8 or our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information HB01 HB01 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Fig. 18 Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 Code T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30701 Rev. 2 - 2 7 of 8 www.diodes.com HBDM60V600W NEW PRODUCT Mechanical Details SOT-363 A B C G H K J M D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Fig. 19 Suggested Pad Layout: (Based on IPC-SM-782) Figure 20 Dimensions SOT-363* Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 * Typical dimensions in mm Fig. 20 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30701 Rev. 2 - 2 8 of 8 www.diodes.com HBDM60V600W