DDTC114ELP PRE-BIASED (R1 = R2) SMALL SIGNALSURFACE MOUNT 100mA NPN TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 2 3 3 1 C • • • • • • • • R2 R1 Mechanical Data Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: Collector Dot (See Diagram) Terminals: Finish — NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Code N5, Dot denotes Collector Side Ordering Information: See Page 4 Weight: 0.001 grams (approximate) 2 E 1 B Fig. 1 1 OUT C 3 B IN R1 R2 IN E 2 GND Schematic and Pin Configuration C B 1 3 E 2 OUT GND Equivalent Inverter Circuit Fig. 2 Component P/N DDTC114ELP Maximum Ratings R1(NOM) R2(NOM) Figure 10K 10K 2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V Output Current IO 50 mA Power Dissipation (Note 3) Pd 250 mW Power Deration above 25°C Pder 2 mW/°C Ic(max) 100 mA Symbol Value Unit Tj, Tstg -55 to +150 °C RθJA 400 °C/W Collector Current Thermal Characteristics Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of NPN) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”; pad layout as shown on page 5 or Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30945 Rev. 4 - 2 1 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 50 ⎯ ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 ⎯ ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage* Off Characteristics (Note 4) B V(BR)EBO 5 ⎯ ⎯ V IE = 50μA, IC = 0 Collector Cutoff Current* ICEX ⎯ ⎯ 0.5 μA VCE = 50V, VEB(OFF) = 3.0V Base Cutoff Current (IBEX) IBL ⎯ ⎯ 0.5 μA VCE = 50V, VEB(OFF) = 3.0V Collector-Base Cut Off Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V, IE = 0 Collector-Emitter Cut Off Current, IO(OFF) ICEO ⎯ ⎯ 1 μA VCB = 50V, IB = 0 IEBO ⎯ ⎯ 0.4 mA VEB = 4V, IC = 0 VI(OFF) ⎯ 1.16 0.5 V VCC = 5V, IO = 100uA 10 ⎯ ⎯ ⎯ VCE = 5V, IC = 1mA 15 ⎯ ⎯ ⎯ VCE = 5V, IC = 2mA Emitter-Base Cut Off Current Input Off Voltage B On Characteristics (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage* Base-Emitter Saturation Voltage* Input-On Voltage Input Current 60 ⎯ ⎯ ⎯ VCE = 5V, IC = 10mA 100 ⎯ ⎯ ⎯ VCE = 5V, IC = 50mA 90 ⎯ ⎯ ⎯ VCE = 5V, IC = 70mA ⎯ ⎯ 0.15 V IC = 10mA, IB = 1mA ⎯ ⎯ 0.2 V IC = 50mA, IB = 5mA ⎯ ⎯ 0.25 V IC = 50mA, IB = 2.5mA ⎯ ⎯ 0.25 V IC = 50mA, IB = 10mA ⎯ ⎯ 0.3 V IC = 70mA, IB = 10mA ⎯ ⎯ 0.85 V VCE = 5V, IC = 2mA ⎯ ⎯ 0.95 V VCE = 5V, IC = 10mA ⎯ ⎯ 0.98 V IC = 10mA, IB = 1mA, VCE = 5V ⎯ ⎯ 1.2 V IC = 50mA, IB = 5mA, VCE = 5V VI(ON) 2.5 1.6 ⎯ V VO = 0.3V, IO = 50mA II ⎯ ⎯ 0.88 mA hFE VCE(SAT) VBE(ON) VBE(SAT) B B B B B B B VI = 5V VO(ON) ⎯ ⎯ 0.3 V Input Resistance R1 7 10 13 KΩ ⎯ Resistance Ratio (R2/R1) 0.8 1 1.2 ⎯ ⎯ fT ⎯ 250 ⎯ MHz Output On Voltage (Same as VCE(SAT)) II = 2.5mA, IO = 50mA Small Signal Characteristics Current Gain-Bandwidth Product VCE = 10V, IE = 5mA, f = 1MHz * Guaranteed by design. Note: 4. Short duration test pulse used to minimize self-heating effect. Pulse Test: Pulse width tp<300 us, Duty Cycle, d<=2%. DS30945 Rev. 4 - 2 2 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated @TA = 25°C unless otherwise specified IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 300 250 200 150 100 RθJA=400 °C/W 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve 250 V CE =5V hFE, DC CURRENT GAIN VI(ON), INPUT VOLTAGE (V) 200 150 100 50 0 0.1 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Input Voltage vs. TA 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain 15 VBE, BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) NEW PRODUCT Typical Characteristics Curves 13.5 V CE=5V 12 10.5 9 7.5 6 4.5 3 1.5 0 0.1 IC, COLLECTOR CURRENT (mA) Fig. 7 VCE(SAT) vs. IC DS30945 Rev. 4 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 VBE vs. IC 3 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated VBE(SAT), BASE EMITTER VOLTAGE (V) NEW PRODUCT 30 IC/IB=10 27 24 21 18 15 12 9 6 3 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 VBE(SAT) vs. IC Ordering Information (Note 6) Marking Code N5 Device DDTC114ELP-7 Notes: Packaging DFN1006-3 Shipping 3000/Tape & Reel 6. For packaging details, please see page 5 or go to our website at http://www.diodes.com/ap2007.pdf. Marking Information N5 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month e.g. 9 = September N5 Fig. 13 Date Code Key Year 2007 U Code 2008 V 2009 W 2010 X Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 DS30945 Rev. 4 - 2 4 of 5 www.diodes.com 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D DDTC114ELP © Diodes Incorporated NEW PRODUCT Package Outline Dimensions DFN1006-3 G H A K B C M Dim Min Max Typ A 0.95 1.05 1.00 B 0.55 0.65 0.60 C 0.45 0.55 0.50 D 0.20 0.30 0.25 G 0.47 0.53 0.50 0.03 H 0 0.05 K 0.10 0.20 0.15 L 0.20 0.30 0.25 M — — 0.35 N — — 0.40 All Dimensions in mm D N L Fig. 14 Suggested Pad Layout: (Based on IPC-SM-782) DFN1006-3 C X1 X G2 Z 1.1 G1 0.3 G2 0.2 X 0.7 X1 0.25 Y 0.4 C 0.7 All Dimensions in mm G1 Y Z Fig. 15 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30945 Rev. 4 - 2 5 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated