IK Semicon IW4502B Strobed hex inverter/buffer high-voltage silicon-gate cmo Datasheet

TECHNICAL DATA
IW4502B
Strobed Hex Inverter/Buffer
High-Voltage Silicon-Gate CMOS
The IW4502B consists of six inverter/buffers with 3-state outputs. A
logic “1” on the OUTPUT ENABLE input produces a high impedance
state in all six outputs. This feature permits common busing of the
outputs, thus simplifying system design. A logic “1” on the DIRECTION
input switches all six outputs to logic “0” if the OUTPUT ENABLE input
is a logic “0”.
• Operating Voltage Range: 3.0 to 18 V
• Maximum input current of 1 μA at 18 V over full package-temperature
range; 100 nA at 18 V and 25°C
• Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
ORDERING INFORMATION
IW4502BN Plastic
IW4502BD SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Inputs
PIN 16=VCC
PIN 8= GND
Output
Output
Enable
Direction
A
Y
L
L
L
H
L
L
H
L
L
H
X
L
H
X
X
Z
Z = high impedance
X = don’t care
Rev. 00
IW4502B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +20
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
VOUT
IIN
DC Input Current, per Pin
±10
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
PD
Power Dissipation per Output Transistor
100
mW
-65 to +150
°C
260
°C
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
TA
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min
Max
Unit
3.0
18
V
0
VCC
V
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
Rev. 00
IW4502B
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
Guaranteed Limit
V
≥-55°C
25°C
≤125
°C
Unit
VOUT=0.5 V
VOUT=1 V
VOUT=1.5
5.0
10
15
3.5
7
11
3.5
7
11
3.5
7
11
V
Maximum Low Level Input Voltage
VOUT= VCC - 0.5V
VOUT= VCC - 1.0 V
VOUT= VCC - 1.5V
5.0
10
15
1.5
3
4
1.5
3
4
1.5
3
4
V
VOH
Minimum High-Level
Output Voltage
VIN=GND
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
4.95
9.95
14.95
V
VOL
Maximum Low-Level
Output Voltage
VIN= VCC
5.0
10
15
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
IIN
Maximum Input
Leakage Current
VIN= GND or VCC
18
±0.1
±0.1
±1.0
μA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN= GND or VCC
5.0
10
15
20
1
2
4
20
1
2
4
20
30
60
120
600
μA
IOL
Minimum Output
Low (Sink) Current
VIN= GND or VCC
UOL=0.4 V
UOL=0.5 V
UOL=1.5 V
5.0
10
15
3.84
9.6
25.2
3.06
7.8
20.4
2.16
5.4
14.4
Minimum Output
VIN= GND or VCC
High (Source) Current UOH=2.5 V
UOH=4.6 V
UOH=9.5 V
UOH=13.5 V
5.0
5.0
10
15
-2
-0.64
-1.6
-4.2
-1.6
-0.51
-1.3
-3.4
-1.15
-0.36
-0.9
-2.4
18
±0.4
±0.4
±12
Symbol
Parameter
VIH
Minimum High-Level
Input Voltage
VIL
IOH
IOZ
Maximum Tree-State
Leakage Current
Test Conditions
Output in High-Impedance
State
VIN= GND or VCC
VOUT= GND or VCC
mA
mA
μA
Rev. 00
IW4502B
AC ELECTRICAL CHARACTERISTICS (CL=50pF, RL=200kΩ unless otherwise specified, Input tr=tf=20
ns)
Guaranteed Limit
VCC
Symbol
Parameter
V
≥-55°C
25°C
≤125°C
Unit
tPHL
Maximum Propagation Delay, Input A or
Direction to Output Y (Figure 1)
5.0
10
15
270
120
80
270
120
80
540
240
160
ns
tPLH
Maximum Propagation Delay, Input A or
Direction to Output Y (Figure 1)
5.0
10
15
380
180
130
380
180
130
760
360
260
ns
tPHZ
Maximum Propagation Delay, Output Enable to
Output Y (Figure 2)
RL = 1 kΩ
5.0
10
15
120
80
60
120
80
60
240
160
120
ns
tPZH
Maximum Propagation Delay, Output Enable to
Output Y (Figure 2)
RL = 1 kΩ
5.0
10
15
220
100
80
220
100
80
440
200
160
ns
tPLZ
Maximum Propagation Delay, Output Enable to
Output Y (Figure 2)
RL = 1 kΩ
5.0
10
15
250
130
110
250
130
110
500
260
220
ns
tPZL
Maximum Propagation Delay, Output Enable to
Output Y (Figure 2)
RL = 1 kΩ
5.0
10
15
250
110
80
250
110
80
500
220
160
ns
tTLH
Maximum Output Transition Time, Any Output
(Figure 1)
5.0
10
15
200
100
80
200
100
80
400
200
160
ns
tTHL
Maximum Output Transition Time, Any Output
(Figure 1)
5.0
10
15
120
60
40
120
60
40
240
120
80
ns
CIN
Maximum Input Capacitance
-
7.5
pF
Maximum Tree-State Output Capacitance
(Output in High-Impedance State)
-
15
pF
COUT
Rev. 00
IW4502B
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
EXPANDED LOGIC DIAGRAM
(1/6 of the Device)
Rev. 00
IW4502B
N SUFFIX PLASTIC DIP
(MS - 001BB)
A
Dimension, mm
9
16
Symbol
MIN
MAX
A
18.67
19.69
B
6.1
7.11
B
1
8
5.33
C
F
L
C
D
0.36
0.56
F
1.14
1.78
G
2.54
H
7.62
-T- SEATING
PLANE
N
G
K
M
H
D
J
0.25 (0.010) M T
NOTES:
1. Dimensions “A”, “B” do not include mold flash or protrusions.
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
J
0°
10°
K
2.92
3.81
L
7.62
8.26
M
0.2
0.36
N
0.38
D SUFFIX SOIC
(MS - 012AC)
Dimension, mm
A
16
9
H
B
1
G
P
8
R x 45
C
-TK
D
SEATING
PLANE
J
0.25 (0.010) M T C M
NOTES:
1. Dimensions A and B do not include mold flash or protrusion.
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
for A; for B ‑ 0.25 mm (0.010) per side.
F
M
Symbol
MIN
MAX
A
9.8
10
B
3.8
4
C
1.35
1.75
D
0.33
0.51
F
0.4
1.27
G
1.27
H
5.72
J
0°
8°
K
0.1
0.25
M
0.19
0.25
P
5.8
6.2
R
0.25
0.5
Rev. 00
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