Diotech MURF1020CT Super fast recovery silicon rectifier Datasheet

MURF1005CT THRU MURF1060CT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 10.0 Ampere
FEATURES
ITO-220AB
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
● Super fast switching for high efficiency
● Low reverse leakage
● High forward surge current capability
● High temperature soldering guaranteed:
250 C/10 seconds,0.25 ”(6.35mm) from case
●
.406(10.3)
.386(9.8)
● Case: JEDEC ITO-220AB molded plastic body
● Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
● High temperature soldering guaranteed:
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
250 C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
o
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
.610(15.5)
.571(14.5)
.157(4.0)
.142(3.6)
MECHANICAL DATA
●
●
●
●
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
PIN 1 -
+
PIN 3 -
PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
MURF
MURF
MURF
MURF
1005CT 1010CT 1015CT 1020CT
MURF
1030CT
MURF
MURF
1040CT 1060CT Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current
@TC = 100°C
IO
10
A
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
VFM
@IF = 5.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
0.95
1.3
1.7
10
400
IRM
V
µA
Reverse Recovery Time (Note 1)
trr
35
50
nS
Typical Junction Capacitance (Note 2)
Cj
80
50
pF
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
-65 to +150
°C
MURF1005CT THRU MURF1060CT
RATINGS AND CHARACTERISTIC CURVES
50
12
50V-200V
10
10
8
6
1
300V-400V
600V
4
.1
2
0
0
50
100
150
.01
0.4
100
0.6
1.0
0.8
1.2
1.4
1.6
1.8
400
TJ = 25
F=1.0MHZ
Vsig=50mVp-p
80
100
60
40
20
0
50V-400V
600V
1
10
50
10
0.1
100
10
1
1000
TJ =125
100
10
1
TJ =25
.1
40
20
0
60
100
80
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
(-)
DUT
PULSE
GENERATOR
(NOTE 2)
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
100
Similar pages