Vishay BYT62 Silicon mesa rectifier Datasheet

BYT62
Vishay Telefunken
Silicon Mesa Rectifier
Features
D
D
D
D
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristic
Low reverse current
Applications
94 9539
High voltage rectifier
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction temperature
Storage temperature range
Test Conditions
Type
tp=10ms, half sinewave
Tamb=25°C, RthJA 60K/W
I(BR)R=1A, inductive load
x
Symbol
VR
=VRRM
IFSM
IFAV
ER
Value
2400
Unit
V
10
350
60
A
mA
mJ
Tj
Tstg
175
–55...+190
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, TL=constant
Symbol
RthJA
Value
60
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Reverse breakdown voltage
Reverse recovery time
Document Number 86033
Rev. 2, 24-Jun-98
Test Conditions
IF=200mA
IF=1A
IF=1A, Tj=175°C
IF=1A, Tj=–40°C
VR=VRRM
VR=VRRM, Tj=175°C
VR=VRRM, Tj=–40°C
IR=100mA
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol
VF
VF
VF
VF
IR
IR
IR
V(BR)R
trr
Min
Typ
Max
3.0
3.6
2.9
4.0
5
250
400
2500
5
Unit
V
V
V
V
mA
mA
nA
V
ms
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BYT62
Vishay Telefunken
10
600
500
I F – Forward Current ( A )
PR – Maximum Reverse Power Dissipation ( mW )
Characteristics (Tj = 25_C unless otherwise specified)
RthJA=30K/W
400
300
RthJA=60K/W
200
Tj = +175°C
1
Tj = +25°C
0.1
Tj = –40°C
0.01
100
VR = VR RM
0
0
40
80
120
160
0.001
200
0
Tj – Junction Temperature ( °C )
95 9725
1
2
3
4
5
6
7
VF – Forward Voltage ( V )
95 9727
Figure 3. Max. Forward Current vs. Forward Voltage
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
I R – Reverse Current ( mA )
1000
VR = VR RM
100
10
1
0.1
0
95 9726
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Current vs.
Junction Temperature
Dimensions in mm
∅ 3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
26 min.
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4.2 max.
94 9538
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
Document Number 86033
Rev. 2, 24-Jun-98
BYT62
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86033
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
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