DIODES ZXTC2045E6TC

ZXTC2045E6
Dual 40V complementary transistors in SOT23-6
Summary
BVCEV = 40V
BVCEO = 30V
Features
•
40V complementary device
•
Up to 5 amps peak current
•
High hFE
•
SOT236 package
C1
B1
Applications
•
C2
B2
MOSFET and IGBT gate driving
E1
E2
Ordering information
Device
Reel size
Tape width
Quantity per reel
ZXTC2045E6TA
7”
8mm embossed
3,000
ZXTC2045E6TC
13”
8mm embossed
10,000
Device marking
Pin out - top view
2045
Issue 1 - January 2006
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ZXTC2045E6
Absolute maximum ratings (each transistor)
Parameter
Symbol
Limit
Unit
NPN
PNP
Collector-base voltage
BVCBO
40
-40
V
Collector-emitter voltage
BVCEV
40
-40
V
Collector-emitter voltage
BVCEO
30
-30
V
Emitter-base voltage
BVEBO
7
-7
V
ICM
5
-5
A
Continuous collector current (a)
IC
1.5
-1.5
A
Base current
IB
1
-1
A
Power dissipation at TA =25°C (a) (c)
Linear derating factor
PD
0.9
7.2
W
mW/°C
Power dissipation at TA =25°C (a) (d)
Linear derating factor
PD
1.1
8.8
W
mW/°C
Power dissipation at TA =25°C (b) (c)
Linear derating factor
PD
1.7
13.6
W
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Value
Unit
Junction to ambient (a) (c)
RθJA
139
°C/W
Junction to ambient (b) (c)
RθJA
73
°C/W
Junction to ambient (a) (d)
RθJC
113
°C/W
Peak pulse current
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) As above measured at t < 5 seconds.
(c) For device with one active die.
(d) For device with two active dice running at equal power.
Issue 1 - January 2006
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ZXTC2045E6
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown BVCBO
voltage
(-)40(*)
V
IC = (-)100␮A
Collector-emitter
breakdown voltage
BVCEV
(-)40(*)
V
IC = (-)1␮A
0.25V>VBE>1.0V
( 0.25V<VBE<1.0V )
Collector-emitter
breakdown voltage
BVCEO
(-)30(*)
V
IC = (-)10mA (†)
Emitter-base breakdown
voltage
BVEBO
(-)7(*) (-)8.5(*)
V
IE = (-)100␮A
Collector cut-off current
ICBO
(-)<1(*) (-)20(*)
nA
VCB = (-)32V
Collector cut-off current
ICES/R
(-)<1(*) (-)20(*)
nA
VCE = (-)16V, Rⱕ 1kΩ
Emitter cut-off current
IEBO
(-)<1(*) (-)20(*)
nA
VEB = (-)6V
Collector-emitter
saturation voltage
VCE(SAT)
(-)375(*)
mV
IC = (-)0.75A, IB =(-)15mA (†)
Base-emitter saturation
voltage
VBE(SAT)
(-)1.2(*)
V
IC =(-) 0.75A, IB =(-)15mA(†)
Static forward current
transfer ratio
hFE
180
300
500
IC = (-)100mA, VCE =(-)2V(†)
NOTES:
(*) ( ) applies to PNP
(†) Measured under pulsed conditions. Pulse width ⱕ 300 s; duty cycle ⱕ 2%.
Issue 1 - January 2006
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ZXTC2045E6
Package details - SOT23-6
DIM
Millimeters
Min.
0.90
0.00
0.90
0.35
0.09
2.70
2.20
1.30
0.10
A
A1
A2
b
C
D
E
E1
L
e
e1
L
Inches
Max.
1.45
0.15
1.30
0.50
0.26
3.10
3.20
1.80
0.60
Min.
0.354
0.00
0.0354
0.0078
0.0035
0.1062
0.0866
0.0511
0.0039
0.95 REF
1.90 REF
0°
Max.
0.0570
0.0059
0.0511
0.0196
0.0102
0.1220
0.1181
0.0708
0.0236
0.0374 REF
0.0748 REF
30°
0°
30°
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Issue 1 - January 2006
© Zetex Semiconductors plc 2006
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