MMDT2222V ADVANCE INFORMATION DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · Epitaxial Planar Die Construction · · · Ultra-Small Surface Mount Package A Complementary PNP Type Available (MMDT2907V) SOT-563 B C Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data · · · · · · · · · D G Case: SOT-563, Molded Plastic M K Terminal Connections: See Diagram H Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking & Type Code Information: See Last Page Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Dim L C1 B2 E2 E1 B1 C2 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm Ordering Information: See Last Page Weight: 0.003 grams (approx.) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Tj, TSTG -55 to +150 °C Symbol Value Unit Pd 150 mW RqJA 833 °C/W Collector Current - Continuous (Note 3) Operating and Storage and Temperature Range Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30563 Rev. 2 - 0 1 of 4 www.diodes.com MMDT2222V ã Diodes Incorporated ADVANCE INFORMATION Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 ¾ V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C OFF CHARACTERISTICS (Note 4) Collector Cutoff Current ICBO ¾ 10 nA mA Collector Cutoff Current ICEX ¾ 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO ¾ 10 nA VEB = 3.0V, IC = 0 IBL ¾ 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 ¾ ¾ ¾ 300 ¾ ¾ ¾ ¾ IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 ¾ 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ¾ 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo — 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 10 ns Rise Time tr ¾ 25 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 60 ns Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Notes: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 4. Short duration test pulse used to minimize self-heating effect. DS30563 Rev. 2 - 0 2 of 4 www.diodes.com MMDT2222V 1000 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) 200 150 100 TA = 125°C 100 TA = -25°C TA = +25°C 10 50 VCE = 1.0V 0 1 -50 0 50 100 150 0.1 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Derating Curve - Total 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 2.0 CAPACITANCE (pF) 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.0 0.1 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 50 10 IC = 30mA IC = 1mA IC = 10mA 1.8 1.0 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 0.1 0.01 10 1 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) ADVANCE INFORMATION 250 0 10 1 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current DS30563 Rev. 2 - 0 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 3 of 4 www.diodes.com MMDT2222V fT, GAIN BANDWIDTH PRODUCT (MHz) ADVANCE INFORMATION 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current Ordering Information (Note 5) Notes: Device Packaging Shipping MMDT2222V-7 SOT-563 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAT = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KAT YM Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30563 Rev. 2 - 0 4 of 4 www.diodes.com MMDT2222V