ON BAV99RWT1G Dual series switching diode Datasheet

BAV99WT1, BAV99RWT1
Preferred Devices
Dual Series Switching
Diodes
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Features
• Pb−Free Packages are Available
http://onsemi.com
Suggested Applications
•
•
•
•
•
ANODE
1
ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
3
CATHODE/ANODE
BAV99WT1
SC−70
CASE 419, STYLE 9
CATHODE
1
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
Non−Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
IFSM
Peak Forward Surge Current
CATHODE
2
ANODE
2
3
CATHODE/ANODE
BAV99RWT1
SC−70
CASE 419, STYLE 10
MARKING
DIAGRAM
450
mA
3
A
2.0
1.0
0.5
SC−70
CASE 419
1
x7....D
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
A7 = BAV99WT1
F7 = BAV99RWT1
D = Date Code
ORDERING INFORMATION
Package
Shipping†
SC−70
3000/Tape & Reel
BAV99WT1G
SC−70
(Pb−Free)
3000/Tape & Reel
BAV99RWT1
SC−70
3000/Tape & Reel
SC−70
(Pb−Free)
3000/Tape & Reel
Device
BAV99WT1
BAV99RWT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4
1
Publication Order Number:
BAV99WT1/D
BAV99WT1, BAV99RWT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
200
1.6
mW
mW/°C
RJA
625
°C/W
PD
300
2.4
mW
mW/°C
RJA
417
°C/W
TJ, Tstg
−65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Symbol
Min
Max
Unit
V(BR)
70
−
Vdc
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
−
−
−
2.5
30
50
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
1.5
pF
Forward Voltage
VF
−
−
−
−
715
855
1000
1250
mVdc
trr
−
6.0
ns
VFR
−
1.75
V
trr
t
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A)
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
820 +10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
t
IF
10%
DUT
50 OUTPUT
PULSE
GENERATOR
90%
50 INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
Notes: (a) A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
BAV99WT1, BAV99RWT1
CURVES APPLICABLE TO EACH DIODE
100
10
I R, REVERSE CURRENT (A)
µ
10
TA = 85°C
TA = 25°C
1.0
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = −40°C
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0.001
1.2
10
0
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
0.68
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
http://onsemi.com
3
8
50
BAV99WT1, BAV99RWT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
B
S
1
2
D
G
0.05 (0.002)
J
N
C
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
K
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE−CATHODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
For additional information, please contact your
local Sales Representative.
BAV99WT1/D
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