DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • 0.4mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Load switch Portable applications Power Management Functions • • • • • Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain DFN1006H4-3 Body Diode S Gate D G Bottom View ESD PROTECTED TO 2kV Top View Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 3) Part Number DMN3730UFB4-7 DMN3730UFB4-7B Notes: Marking NF NF Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3000 10,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NF DMN3730UFB4 Document number: DS35017 Rev. 3 - 2 NF = Product Type Marking Code Dot Denotes Drain Side 1 of 6 www.diodes.com December 2010 © Diodes Incorporated DMN3730UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage (Note 5) VGS = 4.5V TA = 70°C (Note 5) (Note 4) (Note 6) Continuous Drain Current Pulsed Drain Current ID IDM Value 30 ±8 0.91 0.73 0.75 3 Unit Value 0.69 0.47 180 258 -55 to +150 Unit V A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Symbol (Note 5) (Note 4) (Note 5) (Note 4) PD RθJA Operating and Storage Temperature Range TJ, TSTG W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 3 V μA μA VGS = 0V, ID = 10μA VDS = 30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.45 - V Static Drain-Source On-Resistance (Note 7) RDS(on) - - |Yfs| VSD 40 - 0.7 0.95 460 560 730 1.2 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA VDS = 3V, ID = 10mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 - Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in steady-state condition. 5. Same as note 4, except the device measured at t ≤ 10 sec. 6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs. 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. DMN3730UFB4 Document number: DS35017 Rev. 3 - 2 2 of 6 www.diodes.com December 2010 © Diodes Incorporated DMN3730UFB4 2.0 2.0 VGS = 10V VGS = 4.5V VDS = 5V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 3.0V VGS = 2.5V 1.5 VGS = 2.0V VGS = 1.5V 1.0 0.5 1.5 1.0 0.5 TA = 150°C TA = 85°C TA = 125°C T A = 25°C TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5V ID = 500mA 1.2 1.0 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN3730UFB4 Document number: DS35017 Rev. 3 - 2 3 of 6 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.8 VGS = 4.5V 0.6 T A = 150°C T A = 125°C TA = 85°C 0.4 TA = 25°C TA = -55°C 0.2 0 0 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 2 1.6 0.6 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.25 0.5 0.75 1 1.25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature December 2010 © Diodes Incorporated DMN3730UFB4 2.0 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.8 ID = 1mA 0.6 ID = 250µA 0.4 1.6 TA = 25°C 1.2 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 100 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss 10 Crss TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C f = 1MHz 1 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN3730UFB4 Document number: DS35017 Rev. 3 - 2 3 4 of 6 www.diodes.com December 2010 © Diodes Incorporated DMN3730UFB4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 253°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions A DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z DMN3730UFB4 Document number: DS35017 Rev. 3 - 2 5 of 6 www.diodes.com December 2010 © Diodes Incorporated DMN3730UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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