MGS8xx / MGS9xx Series
GaAs Schottky Diodes
Rev. V1
Features
14 Different Configurations
Beam Lead, Flip Chip, or Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MILPRF-38534 Available
Description
The MGS series of GaAs Schottky diodes are
designed for optimum performance in millimeter
wave components operating to 60 GHz.
Beam Lead
Electrical Characteristics, TA = +25°C
Model
VF
mV
Configuration
MGS901
Single Junction
MGS902
Anti-parallel Pair
MGS903
Series Tee
MGS904
4 Junction Ring-Quad
MGS905
4 Junction Bridge-Quad
MGS906
4 Junction Series-Tee
MGS907
8 Junction Ring-Quad
MGS907A 8 Junction Ring-Quad
MGS907B 8 Junction Ring-Quad
MGS908
8 Junction Quad
MGS909
6 Junction Series-Tee
MGS910
12 Junction Ring-Quad
MGS911
12 Junction Bridge-Quad
MGS912
Four Junction
Test Conditions
Δ VF
mV
VBR
V
CJ
pF
Δ CJ
pF
RS
Max.
Max.
Max.
Min.
Max.
Max.
Min.
650
650
650
650
650
1300
1300
1300
1300
1300
1800
1800
1800
2500
750
750
750
750
750
1500
1500
1500
1500
1500
2100
2100
2100
2900
IF = 1 mA
—
20
20
20
20
40
40
40
40
40
60
60
60
—
5
5
5
5
5
10
10
10
10
10
15
15
15
20
IR = 10 µA
Δ VF
mV
VBR
V
CJ
pF
Δ CJ
pF
RS
Max.
Max.
Max.
0.06
—
0.10
—
0.06
0.02
0.06
0.02
0.06
0.02
0.04
0.02
0.04
0.02
0.06
0.02
0.08
0.02
0.04
0.02
0.10
0.03
0.10
0.03
0.10
0.03
0.03
—
VR = 0 V, 1 MHz
Outline
7
GB110
7
GB210
7
GB310
7
B85
7
B86
14
B91
14
B85
12
B85
10
B85
14
B86
21
B90
21
B87
21
B88
28
B89
IF = 5 mA
Flip Chip
Electrical Characteristics, TA = +25°C
Model
VF
mV
Configuration
MGS801
Single Junction
MGS801A Single Junction
MGS802
Anti-parallel Pair
MGS802A Anti-parallel Pair
MGS803
Series Tee
Test Conditions
Min.
Max.
Max.
Min.
650
650
650
650
650
750
750
750
750
750
IF = 1 mA
—
—
20
20
20
5
5
5
5
5
IR = 10 µA
0.05
—
0.075
—
0.10
—
0.15
—
0.06
0.02
VR = 0 V, 1 MHz
7
5
7
5
7
IF = 5 mA
Outline
GC110
GC110
GC210
GC210
GC310
1
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MGS8xx / MGS9xx Series
GaAs Schottky Diodes
Rev. V1
Absolute Maximum Ratings
Rating
Limits
Reverse Voltage
Rated Vbr
Forward Current
50 mA
DC Power Dissipation
75 mW per junction @ TA = 25°C
Operating Temperature
-65°C to +150°
Storage Temperature
-65°C to +150°
Soldering Temperature (packaged)
+260°C for 5 seconds per JEDEC J-STD-20C
Minimum Beam Lead Pull Strength
6 grams
Outlines
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MGS8xx / MGS9xx Series
GaAs Schottky Diodes
Rev. V1
Outlines
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MGS8xx / MGS9xx Series
GaAs Schottky Diodes
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support