IXYS IXTA180N10T N-channel enhancement mode avalanche rated Datasheet

IXTA180N10T
IXTP180N10T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
= 100V
= 180A
Ω
≤ 6.4mΩ
TO-263 (IXTA)
G
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
VGSM
Transient
± 30
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current limit, RMS
TC = 25°C, pulse width limited by TJM
180
75
450
A
A
A
IAR
EAS
TC = 25°C
TC = 25°C
25
750
A
mJ
PD
TC = 25°C
480
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in
2.5
3.0
g
g
S
Maximum Ratings
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Md
Mounting torque (TO-220)
Weight
TO-263
TO-220
(TAB)
TO-220 (IXTP)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z
z
z
z
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
100
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
Applications
V
4.5
z
V
± 100 nA
5 μA
100 μA
TJ = 150°C
VGS = 10V, ID = 25A, Notes 1, 2
5.7
6.4 mΩ
z
z
z
z
z
z
© 2008 IXYS CORPORATION, All rights reserved
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching Applications
High Voltage Synchronous Recifier
DS99651A(3/08)
IXTA180N10T
IXTP180N10T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
gfs
70
110
S
6900
pF
923
pF
162
pF
33
ns
54
ns
42
ns
31
ns
151
nC
39
nC
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
45
nC
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
0.31 °C/W
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
VDS= 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RG = 3.3Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
RthJC
RthCH
TO-220
Max.
°C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
180
A
ISM
Repetitive, pulse width limited by TJM
450
A
VSD
IF = 25A, VGS = 0V, Note 1
0.95
V
trr
IF = 90A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 0.5 • VDSS
72
ns
5.1
A
0.18
μC
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA180N10T
IXTP180N10T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
300
VGS = 10V
9V
8V
160
250
140
225
120
100
ID - Amperes
ID - Amperes
VGS = 10V
9V
8V
275
7V
80
60
200
175
7V
150
125
100
6V
40
75
50
20
6V
25
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
Fig. 3. Output Characteristics
@ 150ºC
6
7
2.8
VGS = 10V
9V
8V
VGS = 10V
2.6
2.4
RDS(on) - Normalized
140
ID - Amperes
5
Fig. 4. RDS(on) Normalized to ID = 90A Value
vs. Junction Temperature
180
160
4
VDS - Volts
VDS - Volts
7V
120
100
80
6V
60
2.2
2.0
I D = 180A
1.8
1.6
I D = 90A
1.4
1.2
1.0
40
0.8
20
5V
0.6
0
0.4
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
-25
0
Fig. 5. RDS(on) Normalized to ID = 90A Value
vs. Drain Current
90
2.8
80
TJ = 175ºC
75
100
125
150
175
External Lead Current Limit
70
2.4
2.2
ID - Amperes
RDS(on) - Normalized
2.6
2.0
VGS = 10V
15V - - - -
1.6
50
Fig. 6. Drain Current vs. Case Temperature
3.0
1.8
25
TJ - Degrees Centigrade
VDS - Volts
60
50
40
30
1.4
TJ = 25ºC
1.2
20
1.0
10
0.8
0
0.6
0
50
100
150
200
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
250
300
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTA180N10T
IXTP180N10T
Fig. 8. Transconductance
225
150
200
135
175
120
150
g f s - Siemens
ID - Amperes
Fig. 7. Input Admittance
125
100
TJ = 150ºC
25ºC
- 40ºC
75
TJ = - 40ºC
25ºC
105
90
75
150ºC
60
45
50
30
25
15
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
25
50
75
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
150
175
200
225
250
10
250
9
225
8
200
7
175
VGS - Volts
IS - Amperes
125
Fig. 10. Gate Charge
275
150
125
VDS = 50V
I D = 25A
I G = 10mA
6
5
4
100
3
75
TJ = 150ºC
2
50
TJ = 25ºC
25
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
20
VSD - Volts
40
60
80
100
120
140
160
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000.0
100,000
f = 1 MHz
100µs
RDS(on) Limit
25µs
1ms
10ms
100.0
Ciss
10,000
I D - Amperes
Capacitance - PicoFarads
100
ID - Amperes
Coss
1,000
10.0
DC, 100ms
1.0
TJ = 175ºC
TC = 25ºC
Single Pulse
Crss
100
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
VDS - Volts
100
IXTA180N10T
IXTP180N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
65
RG = 3.3Ω
65
60
VGS = 10V
60
55
VDS = 50V
55
t r - Nanoseconds
t r - Nanoseconds
70
50
45
40
I
35
D
= 50A
30
25
I
D
TJ = 25ºC
50
45
RG = 3.3Ω
40
VGS = 10V
35
VDS = 50V
30
25
= 25A
20
20
15
15
10
TJ = 125ºC
10
25
35
45
55
65
75
85
95
105
115
125
24
26
28
30
32
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
75
tr
td(on) - - - -
70
37
55
50
I D = 25A
49
32
46
35
31
30
30
14
16
18
35
45
RG - Ohms
64
t f - Nanoseconds
td(off) - - - -
55
RG = 3.3Ω, VGS = 10V
52
VDS = 50V
33
49
32
46
TJ = 25ºC
31
30
35
95
105
115
40
125
40
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
45
50
td(off) - - - 220
TJ = 125ºC, VGS = 10V
VDS = 50V
120
190
100
160
25A < I D < 50A
80
I
D
130
= 25A, 50A
60
100
43
40
70
40
20
40
2
4
6
8
10
12
RG - Ohms
14
16
18
20
t d(off) - Nanoseconds
58
140
t d(off) - Nanoseconds
36
30
85
250
tf
61
TJ = 125ºC
25
75
160
t f - Nanoseconds
37
34
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
38
35
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
tf
43
I D = 25A, 50A
25
20
58
33
20
0
61
25A < I D < 50A
RG = 3.3Ω, VGS = 10V
52
40
12
50
td(off) - - - -
34
40
10
48
55
45
8
46
35
60
6
44
VDS = 50V
36
t f - Nanoseconds
t r - Nanoseconds
100
4
42
t d(off) - Nanoseconds
60
t d(on) - Nanoseconds
I D = 50A
120
80
40
64
tf
65
VDS = 50V
38
38
TJ = 125ºC, VGS = 10V
140
36
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
180
160
34
ID - Amperes
IXTA180N10T
IXTP180N10T
Fig. 19. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_180N10T(61) 2-02-07-B
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