ISC IRF720A N-channel mosfet transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
IRF720A
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
3.3
A
IDM
Drain Current-Single Plused
13
A
PD
Total Dissipation @TC=25℃
50
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Storage Temperature
-55~150
℃
MAX
UNIT
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
80
℃/W
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isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
IRF720A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
CONDITIONS
MIN
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
400
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on)
Drain-Source On-Resistance
IGSS
V(BR)DSS
PARAMETER
TYP
MAX
UNIT
V
2
4
V
VGS= 10V; ID= 1.8A
1.8
Ω
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS=0
250
uA
VSD
Forward On-Voltage
IS= 3.3A; VGS=0
1.6
V
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
360
pF
55
pF
20
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
Td(on)
Tr
Td(off)
Tf
PARAMETER
CONDITIONS
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDD=200V,ID=3.3A
VGS=10V,RGEN=18Ω
RGS=18Ω
Fall Time
isc website:www.iscsemi.com
2
MIN
TYP
MAX
UNIT
10
15
ns
14
21
ns
30
45
ns
13
20
ns
isc & iscsemi is registered trademark
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