ON MJD44H11RL Silicon power transistor Datasheet

MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount
•
•
•
•
•
•
(“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
4
1 2
3
Symbol
Max
Unit
VCEO
80
Vdc
VEB
5
Vdc
Collector Current − Continuous
Peak
IC
8
16
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
−55 to
+ 150
°C
Collector−Emitter Voltage
Emitter−Base Voltage
Operating and Storage Junction Temperature
Range
TJ, Tstg
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
DPAK−3
CASE 369D
STYLE 1
YWW
J4
xH11
4
MAXIMUM RATINGS
Rating
MARKING
DIAGRAMS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
2
3
Y
WW
x
= Year
= Work Week
= 4 or 5
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient*
RJA
71.4
°C/W
TL
260
°C
Lead Temperature for Soldering
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 6
1
Publication Order Number:
MJD44H11/D
MJD44H11 (NPN) MJD45H11 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
80
−
−
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
−
−
10
A
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
−
−
50
A
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
−
−
1
Vdc
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
−
−
1.5
Vdc
hFE
60
−
−
−
40
−
−
−
−
130
230
−
−
−
−
50
40
−
−
−
−
300
135
−
−
−
−
500
500
−
−
−
−
140
100
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
Ccb
MJD44H11
MJD45H11
pF
fT
MJD44H11
MJD45H11
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
td + tr
MJD44H11
MJD45H11
ns
ts
MJD44H11
MJD45H11
ns
tf
MJD44H11
MJD45H11
http://onsemi.com
2
ns
MJD44H11 (NPN) MJD45H11 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
DPAK
369C
75 Units / Rail
DPAK−3
369D
75 Units / Rail
MJD44H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD44H11RL
DPAK
369C
1800 Tape & Reel
MJD44H11T4
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
MJD44H11T5
DPAK
369C
2500 Tape & Reel
MJD45H11
DPAK
369C
75 Units / Rail
Device
MJD44H11
MJD44H11−001
MJD44H11T4G
MJD45H11−001
DPAK−3
369D
75 Units / Rail
MJD45H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD45H11RL
DPAK
369C
1800 Tape & Reel
MJD45H11T4
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
MJD45H11T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJD44H11 (NPN) MJD45H11 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
RJC(t) = r(t) RJC
RJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) JC(t)
0.1
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
t1
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1k
Figure 1. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
10
500s
5
3
2
dc
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100s
1ms
5ms
1
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
0.5
0.3
0.1
0.05
1
5
7 10
20 30
3
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Maximum Forward Bias
Safe Operating Area
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
0.02
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 3. Power Derating
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4
125
150
MJD44H11 (NPN) MJD45H11 (PNP)
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
VCE = 4 V
100
VCE = 1 V
TJ = 25°C
10
0.1
1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJD44H11 DC Current Gain
Figure 5. MJD45H11 DC Current Gain
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
25°C
100
−40 °C
VCE = 1 V
0.1
1
VCE = 1 V
0.1
1
10
Figure 6. MJD44H11 Current Gain
versus Temperature
Figure 7. MJD45H11 Current Gain
versus Temperature
SATURATION VOLTAGE (VOLTS)
1.2
VBE(sat)
0.6
0
0.1
100
IC, COLLECTOR CURRENT (AMPS)
0.8
0.2
25°C
−40 °C
IC, COLLECTOR CURRENT (AMPS)
1
0.4
TJ = 125°C
10
10
1.2
SATURATION VOLTAGE (VOLTS)
1V
10
0.1
10
1000
10
VCE = 4 V
100
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
1
0.8
0.6
0.4
IC/IB = 10
TJ = 25°C
VCE(sat)
0.2
0
0.1
10
VBE(sat)
Figure 8. MJD44H11 On−Voltages
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. MJD45H11 On−Voltages
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5
10
MJD44H11 (NPN) MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD44H11 (NPN) MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 1:
PIN 1.
2.
3.
4.
T
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7
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
MJD44H11 (NPN) MJD45H11 (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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