SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX1047A ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 40mΩ at 4A Complimentary Type Partmarking Detail - C E C FCX1147A 047 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ** ICM 20 A Continuous Collector Current IC 4 A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Min UNIT CONDITIONS. 35 V IC=100µA VCES 35 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 10 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 35 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=20V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=20V Collector-Emitter Saturation Voltage VCE(sat) 25 50 140 160 220 40 70 200 240 350 mV mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=4A, IB=50mA* IC=5A, IB=25mA* Base-Emitter Saturation Voltage VBE(sat) 920 1000 mV IC=4A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 860 950 mV IC=4A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 290 300 200 200 60 Typ 430 440 450 350 330 110 Max IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* 1200 Transition Frequency fT 150 MHz IC=50mA, VCE=10V f=50MHz Output Capacitance Cobo 85 pF VCB=10V, f=1MHz ton 130 ns IC=4A, IB=40mA, VCC=10V toff 230 ns IC=4A, IB=±40mA, VCC=10V Switching Times *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1047A TYPICAL CHARACTERISTICS +25°C IC/IB=100 0.6 0.6 0.4 0.2 0 1m -55°C +25°C +100°C +150°C 0.4 IC/IB=200 IC/IB=100 IC/IB=50 0.2 0 10m IC - 100m 1 10 100 1m 10m IC - Collector Current (A) VCE(sat) v IC VCE=2V 100m 1 10 100 Collector Current (A) VCE(sat) v IC IC/IB=100 1 800 +100°C +25°C -55°C 0.8 600 0.6 400 -55°C +25°C +100°C +150°C 0.4 200 0.2 0 1m 10m IC - 100m 1 10 100 0 1m Collector Current (A) hFE v IC 10m IC - 100m 1 10 100 Collector Current (A) VBE(sat) v IC 100 VCE=2V 1 0.8 10 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 1 0 1m 10m IC - 100m 1 10 Collector Current (A) VBE(on) v IC 100 0.1 100m DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100