PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX795A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 15 pF VCB=-10V, f=1MHz ton toff 100 1900 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V C B *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance Junction to Ambient1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W ZTX795A ISSUE 1 APRIL 94 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps * Very low saturation voltage Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -140 Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.5 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-286 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -140 V IC=-100µA V(BR)CEO -140 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-100V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 -0.25 V V V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-500mA, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.75 300 250 100 3-285 800 IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX795A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 15 pF VCB=-10V, f=1MHz ton toff 100 1900 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V C B *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance Junction to Ambient1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W ZTX795A ISSUE 1 APRIL 94 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps * Very low saturation voltage Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -140 Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.5 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-286 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -140 V IC=-100µA V(BR)CEO -140 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-100V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 -0.25 V V V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-500mA, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.75 300 250 100 3-285 800 IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* ZTX795A TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25°C 1.6 1.4 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IC/IB=40 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 1 0.001 10 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C VCE=2V 1.6 750 1.4 1.2 1.0 500 0.8 0.6 250 0.4 1.4 0.2 0 0.01 IC - Collector Current (Amps) VBE(sat) - (Volts) 1.6 0.01 hFE - Typical Gain 0.001 hFE - Normalised Gain -55°C +25°C +100°C +175°C -55°C +25°C +100°C +175°C IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 10 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 Single Pulse Test at Tamb=25°C 1 -55°C +25°C +100°C VCE=2V IC - Collector Current (Amps) 1.6 VBE - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 0.1 0.01 0.001 1 10 IC - Collector Current (Amps) D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-287 1000