Central CPD41 Switching diode high current switching diode chip Datasheet

PROCESS
CPD41
Switching Diode
High Current Switching Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
19.7 x 19.7 MILS
Die Thickness
8.0 MILS
Anode Bonding Pad Area
6.5 x 6.5 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
30,394
PRINCIPAL DEVICE TYPES
1N3600
1N4150
CMPD4150
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD41
Typical Electrical Characteristics
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
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