Zetex FZT1053A Npn silicon planar medium power high gain transistor Datasheet

SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
FZT1053A
ISSUE 2 - MARCH 2001
FEATURES
*
*
*
*
*
*
C
VCEO = 75V
4.5 Amp Continuous Current
10 Amp Pulse Current
Low Saturation Voltage
High Gain
Extremely Low Equivalent On-resistance; RCE(sat) = 78mΩ at 4.5A
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
150
V
Collector-Emitter Voltage
V CEO
75
V
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current
I CM
10
A
Continuous Collector Current
IC
4.5
A
Base Current
IB
500
mA
Power Dissipation at T amb=25°C †
P tot
2.5
W
Operating and Storage Temperature
Range
T j:T stg
-55 to +150
°C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1053A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
Collector-Base
Breakdown Voltage
V (BR)CBO
150
250
V
I C=100µA
Collector-Emitter
Breakdown Voltage
V CES
150
250
V
I C =100µA
Collector-Emitter
Breakdown Voltage
V CEO
75
100
V
I C =10mA
Collector-Emitter
Breakdown Voltage
V CEV
150
250
V
I C =100µA, V EB=1V
Emitter-Base
Breakdown Voltage
V (BR)EBO
7.5
8.8
V
I E=100µA
Collector Cut-Off
Current
I CBO
0.9
10
nA
V CB=120V
Emitter Cut-Off Current I EBO
0.3
10
nA
V EB=4V
Collector Emitter
Cut-Off Current
I CES
1.5
10
nA
V CES =120V
Collector-Emitter
Saturation Voltage
V CE(sat)
21
55
150
160
350
30
75
200
210
440
mV
mV
mV
mV
mV
I C=0.2A, I B=20mA*
I C=0.5A, I B=20mA*
I C=1A, I B=10mA*
I C=2A, I B=100mA*
I C=4.5A, I B=200mA*
Base-Emitter
Saturation Voltage
V BE(sat)
900
1000
mV
I C=3A, I B=100mA*
Base-Emitter Turn-On
Voltage
V BE(on)
825
950
mV
I C =3A, V CE=2V*
Static Forward Current
Transfer Ratio
h FE
Switching Times
t on
162
ns
IC=2A, IB1=IB2=±20mA,
VCC=50V
t off
900
ns
IC=2A, IB1=IB2=±20mA,
V CC=50V
Transition Frequency
fT
140
MHz
I C=50mA, V CE=10V
f=100MHz
Output Capacitance
C obo
21
pF
V CB=10V, f=1MHz
270
300
300
40
440
450
450
60
20
MAX.
UNIT CONDITIONS.
I C=10mA, V CE=2V*
I C=0.5A, V CE=2V*
I C=1A, V CE=2V*
I C=4.5A, V CE=2V*
I C=10A, V CE=2V*
1200
30
FZT1053A
TYPICAL CHARACTERISTICS
0.8
0.8
IC/IB=30
0.6
VCE(sat) - (V)
VCE(sat) - (V)
+25°C
IC/IB=10
IC/IB=30
IC/IB=100
0.4
0.2
0
1m
10m
100m
1
10
0.6
-55°C
+25°C
+100°C
+150°C
0.4
0.2
0
1m
100
VCE(sat) v IC
1.6
VCE=2V
+100°C
+25°C
-55°C
400
VBE(sat) - (V)
hFE - Typical Gain
600
200
0
1m
10m
100m
1
10
IC - Collector Current (A)
VCE=2V
VBE(on) - (V)
1.2
0.8
0
1m
-55°C
+25°C
+100°C
+150°C
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
100m
1
10
100
100
IC/IB=30
1.2
0.8
-55°C
+25°C
+100°C
+150°C
0.4
0
1m
100
IC - Collector Current (A)
hFE v IC
0.4
10m
IC - Collector Current (A)
VCE(sat) v IC
IC - Collector Current (A)
10m
100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
100
10
1
100m
10m
100m
VCE
DC
1s
100ms
10ms
1ms
100us
1
10
100
- Collector Emitter Voltage (V)
Safe Operating Area
FZT1053A
SPICE PARAMETERS
*ZETEX FZT1053A Spice model Last revision 18/3/97
*
.MODEL FZT1053A
NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+
ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+
ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+
CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+
VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
(C) 1997 ZETEX PLC
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the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other
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New Road, Chadderton, Oldham OL9 8NP
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Zetex plc 2001
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