SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 66mΩ at 3A Complimentary Type Partmarking Detail - C E C FCX1051A 151 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -45 V VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -5 A Continuous Collector Current IC -3 A Base Current IB -500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -45 V IC=-100µA V(BR)CES -40 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-10mA Collector-Emitter Breakdown Voltage V(BR)CEV -40 V IC=-100µA, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.3 -100 nA VCB=-36V Emitter Cut-Off Current IEBO -0.3 -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -0.3 -100 nA VCE=-32V Collector-Emitter Saturation Voltage VCE(sat) -60 -120 -140 -200 -90 -180 -220 -300 mV mV mV mV IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-3A, IB=-250mA* Base-Emitter Saturation Voltage VBE(sat) -985 -1050 mV IC=-3A, IB=-250mA* Base-Emitter Turn-On Voltage VBE(on) -850 -950 mV IC=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 145 MHz IC=-50mA, VCE=-10V f=50MHz Output Capacitance Ccb 40 pF VCB=-10V, f=1MHz Switching Times ton 170 ns IC=-2A, IB=-20mA, VCC=-30V toff 460 ns IC=-2A, IB=±20mA, VCC=-30V 270 250 180 100 TYP. 450 400 300 190 45 MAX. IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V* 800 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1151A TYPICAL CHARACTERISTICS 0.4 0.4 IC/IB=100 +25°C 0.3 0.3 IC/IB=50 IC/IB=100 IC/IB=200 0.2 0.2 0.1 0.1 0 1m 10m 100m 1 10 0 -55°C +25°C +100°C +150°C 1m 10m IC - Collector Current (A) VCE(sat) v IC 100m 1 10 IC - Collector Current (A) VCE(sat) v IC 1.0 800 IC/IB=100 VCE=2V 0.8 600 +100°C 0.6 400 +25°C 200 -55°C 0.4 0 -55°C +25°C +100°C +150°C 0.2 1m 10m 100m 1 10 0 10m 1m IC - Collector Current (A) hFE v IC 1 10 10 0.9 1 0.6 0.3 0 100m IC - Collector Current (A) VBE(sat) v IC 0.1 -55°C +25°C +100°C +150°C 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC DC 1s 100ms 10ms 1ms 1us 10 0.01 100m 0.1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100