MA-COM MASWSS0161 High power gaas spdt switch Datasheet

MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Features
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Rev. V4
Functional Schematic
Positive Supply and Control Voltages
1 dB Compression Point: 36 dBm @ 8 V
3rd Order Intercept Point: 65 dBm @ 8 V
Low Insertion Loss: 0.4 dB
Low Power Consumption: 100 µW
Fast Switching Speed
Lead-Free SOIC-8 Plastic Package
Halogen-Free “Green” Mold Compound
260°C Re-flow Compatible
RoHS* Compliant Version of SW-277
8
7
6
5
1
2
3
4
Description
The MASWSS0161 is a GaAs MMIC SPDT switch in
a lead free SOIC-8 lead surface mount plastic
package. This device is ideally suited for use where
low power consumption is required. Typical
applications include transmit/receive switching,
switch matrices and switched filter banks in systems
such as radio and cellular equipment, PCM, GPS,
fiber optic modules, and other battery powered radio
equipment.
Pin Configuration3
Pin No.
Pin Name
Description
1
GND
Ground, Thermal Contact
2
VDD
Drain Voltage
3
RFC
RF Common Port
4
GND
Ground, Thermal Contact
5
RF1
RF Port 1
6
VC1
Control 1
7
VC2
Control 2
8
RF2
RF Port 2
The MASWSS0161 is fabricated using a monolithic
GaAs MMIC using a mature 1 micron process. The
process features full chip passivation for increased
performance and reliability.
Ordering Information1,2
Part Number
Package
MASWSS0161
Bulk Packaging
MASWSS0161TR
1000 piece reel
MASWSS0161SMB
Sample Test Board
1. Reference Application Note M513 for reel size information.
2. All sample boards include 5 loose parts.
3. External DC blocking capacitors required on all RF ports.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V4
Electrical Specifications4: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm
Parameter
Test Conditions
Units
Min.
Typ.5
Max.
Insertion Loss
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
—
0.45
0.55
0.6
—
0.65
—
Isolation
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
—
27
—
30
32
27
—
VSWR
DC - 2.0 GHz
Ratio
—
1.2:1
—
1 dB Compression
Input Power (5 V Supply/Control) 0.9 GHz
Input Power (8 V Supply/Control) 0.9 GHz
dBm
—
33
35.8
—
TRISE, TFALL
10% to 90% RF, 90% to 10% RF
ns
—
30
—
TON, TOFF
50% Control to 90% RF, 50% Control to 10% RF
ns
—
35
—
Transients
In-Band
mV
—
12
—
3rd Order Intercept
Measured Relative to Input Power,
2-tone up to +10 dBm
(5 V Supply/Control) 0.9 GHz
(8 V Supply/Control) 0.9 GHz
dBm
—
55
65
—
Control Current
VC = +5 V
µA
—
—
20
Supply Current
VDD = +5 V
µA
—
—
60
4. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 Ω impedance at all RF
ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers
under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking
capacitors are required on all RF ports.
5. Typical values listed for middle of frequency range noted.
Absolute Maximum Ratings6,7
Parameter
Absolute Maximum
Input Power - 0.5 - 2.0 GHz
5 V Control and Supply
8 V Control and Supply
10 V Control and Supply
37 dBm
40 dBm
42 dBm
Power Dissipation
1.0 W
Supply Voltage
-1 V ≤ VDD ≤ +12 V
Control Voltage
-1 V ≤ VC ≤ VDD +0.2 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
Thermal Resistance
2
8
Truth Table9
Control Inputs
Condition of Switch
RF Common to Each RF Port
VC1
VC2
RF1
RF2
1
0
Off
On
0
1
On
Off
9. “0” = 0 to +0.2 V @ 20 µA maximum.
“1” = +5 V @ 20 µA typical to 10 V @ 500 µA maximum.
θJC = 87°C/W
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. MACOM does not recommend sustained operation near these
survivability limits.
8. Thermal resistance is given for TA = +25°C. TCASE is the
temperature of leads 1 and 4.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V4
Typical Performance Curves
Isolation
Insertion Loss
1.0
40
0.8
35
0.6
30
0.4
25
+25°C
-40°C
+85°C
0.2
0.0
0.5
1.0
1.5
+25°C
-40°C
85°C
20
2.0
15
0.5
1.0
Frequency (GHz)
1.5
2.0
Frequency (GHz)
Compression vs. Control Voltage @ 900 MHz
VSWR
2.0
40
+25°C
-40°C
+85°C
1.8
35
30
1.6
25
1.4
1dB
.1dB
20
1.2
15
1.0
0.5
1.0
1.5
Frequency (GHz)
2.0
10
3
4
5
6
7
8
9
Control Voltage (VDC)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
10
MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V4
Lead-Free SOIC-8†
†
Reference Application Note M538 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is 100% matte tin over copper.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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