DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.015 grams (approximate) SOT-26 Top View ESD PROTECTED D4 D3 S1 D1 D2 G1 Top View Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Thermal Characteristics Symbol VDSS VGSS ID IDM Value 30 ±8 3.2 12.8 Units V V A A Value 900 139 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±5 V μA μA VGS = 0V, ID = 100μA VDS = 30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V RDS (ON) ⎯ 40 50 76 60 80 130 mΩ |Yfs| VSD ⎯ ⎯ 8 0.7 ⎯ 1.1 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 1.0A VDS =10V, ID = 6A VGS = 0V, IS = 2A Ciss Coss Crss ⎯ ⎯ ⎯ 476 77 59 ⎯ ⎯ ⎯ pF pF pF VDS = 15V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN3115UDM Document number: DS31187 Rev. 6 - 2 1 of 4 www.diodes.com May 2010 © Diodes Incorporated DMN3115UDM 10 9 9 8 8 ID , DRAIN CURRENT (A) 10 7 6 5 4 3 7 6 5 4 3 2 2 1 1 0 VDS = 5V Pulsed TA = 150°C T A = 85°C TA = 25°C TA = -55°C 0 0 0.5 1 1.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 1.6 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.4 1.3 1.2 0.1 VGS = 1.5V 1.1 VGS = 2.5V 1.0 0.9 VGS = 4.5V 0.8 0.7 0.01 0.01 0.6 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0.8 0.7 Ciss ID = 250µA C CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.9 0.6 0.5 0.4 0.3 Coss Crss 0.2 0.1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN3115UDM Document number: DS31187 Rev. 6 - 2 2 of 4 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 30 May 2010 © Diodes Incorporated DMN3115UDM IS, SOURCE CURRENT (A) 10 1 TA = 150°C 0.1 TA = 125°C TA = 85°C 0.01 TA = 25°C 0.001 TA = -55°C 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 5) Part Number DMN3115UDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2007 U 2008 V Jan 1 Feb 2 2009 W Mar 3 Apr 4 3N1 = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) YM 3N1 2010 X May 5 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K J DMN3115UDM Document number: DS31187 Rev. 6 - 2 M D L 3 of 4 www.diodes.com SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm May 2010 © Diodes Incorporated DMN3115UDM Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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