DMN601DMK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 Low Input/Output Leakage C 2.70 3.00 2.80 Ultra-Small Surface Mount Package D ⎯ ⎯ 0.95 Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed B C Lead Free By Design/RoHS Compliant (Note 2) H ESD Protected Up To 2kV K "Green" Device (Note 4) M J D Mechanical Data • • Case: SOT-26 • • • Moisture Sensitivity: Level 1 per J-STD-020C F L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminals Connections: See Diagram G1 ⎯ 0.55 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° ⎯ S1 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • • • ⎯ 2.90 All Dimensions in mm Drain D2 F H Body Diode Gate Marking: See Page 2 Ordering & Date Code Information: See Page 2 S2 G2 D1 Weight: 0.015 grams (approximate) Gate Protection Diode ESD protected up to 2kV Source EQUIVALENT CIRCUIT PER ELEMENT Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: Symbol Value Units VDSS 60 V VGSS ±20 V ID 305 800 mA Pd 225 mW RθJA 556 °C/W Tj, TSTG -65 to +150 °C 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10µS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30657 Rev. 2 - 2 1 of 4 www.diodes.com DMN601DMK © Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition 60 ⎯ ⎯ V VGS = 0V, ID = 10µA ⎯ ⎯ 1 µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ±10 µA VGS = ±20V, VDS = 0V VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA RDS (ON) ⎯ ⎯ ⎯ 2.4 4.0 Ω VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA Forward Transfer Admittance |Yfs| 100 ⎯ ⎯ ms VDS =10V, ID = 200mA Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF OFF CHARACTERISTICS (Note 5) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Notes: 1.00 VGS = 10V 8V 6V 5V 4V 3V 10V VDS = 10V Pulsed 8V 6V 1.0 ID, DRAIN CURRENT (A) 1.2 ID, DRAIN CURRENT (A) VDS = 25V, VGS = 0V f = 1.0MHz 5. Short duration test pulse used to minimize self-heating effect. 1.4 5V 0.8 4V 0.6 0.4 0.2 TA = 125°C 0.10 TA = 75°C TA = 25°C TA = -25°C 3V 0.01 0 0 1 2 5 4 3 1 1.5 2 2.5 3 3.5 4.5 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 10 2 VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Electrical Characteristics VGS = 10V Pulsed VDS = 10V ID = 1mA Pulsed TA = 125°C 1.5 TA = 85°C TA = 150°C 1 1 TA = -55°C TA = 25°C 0.5 0 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30657 Rev. 2 - 2 2 of 4 www.diodes.com 0.1 0.001 TA = 0°C TA = -25°C 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 DMN601DMK 10 7 NEW PRODUCT VGS = 5V Pulsed TA = 125°C TA = 25°C Pulsed 6 TA = 85°C ID = 300mA TA = 150°C 5 4 1 TA = -55°C TA = 25°C TA = 0°C 3 TA = -25°C 2 ID = 150mA 1 0.1 0 1 0.1 0.01 0.001 0 4 2 8 6 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2.5 1 VGS = 10V Pulsed VGS = 0V Pulsed 2 ID = 150mA 1.5 1 0.5 IDR, REVERSE DRAIN CURRENT (A) ID = 300mA TA = 125°C TA = 150°C 0.1 TA = 85°C TA = 25°C TA = 0°C 0.01 TA = -25°C TA = -55°C 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS = 10V TA= 25°C Pulsed 0.1 0.01 VGS = 0V 0.001 0.5 0 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage DS30657 Rev. 2 - 2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) 1 1 1 VGS = 10V Pulsed TA = 25°C TA = 150°C 0.1 TA = -55°C TA = 85°C 0.01 0.001 0.001 0.01 1 0.1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 3 of 4 www.diodes.com DMN601DMK NEW PRODUCT Ordering Information Notes: (Note 6) Device Packaging Shipping DMN601DMK-7 SOT-26 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K7K YM S2 G2 D1 Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30657 Rev. 2 - 2 4 of 4 www.diodes.com DMN601DMK