SPICE MODEL: MMBT6427 MMBT6427 Pb Lead-free NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain SOT-23 A Lead Free/RoHS Compliant (Note 1) C B Mechanical Data B · · Case: SOT-23 TOP VIEW E D E G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · H Moisture Sensitivity: Level 1 per J-STD-020C K Terminals: Solderable per MIL-STD-202, Method 208 J Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). · · · · C M L C Terminal Connections: See Diagram Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 Marking (See Page 3): K1D L 0.45 0.61 Ordering & Date Code Information: See Page 3 M 0.085 0.180 a 0° 8° Weight: 0.008 grams (approximate) E B All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 12 V IC 500 mA Symbol Value Unit Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Collector Current - Continuous Thermal Characteristics Characteristic Power Dissipation (Note 2) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 2)@ TA = 25°C Operating and Storage Temperature Range Note: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30048 Rev. 8 - 2 1 of 4 www.diodes.com MMBT6427 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 40 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 3) V(BR)EBO 12 ¾ V IE = 10mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA VCB = 30V, IE = 0 Collector Cutoff Current ICEO ¾ 1.0 mA VCE = 25V, IB = 0 Emitter Cutoff Current IEBO ¾ 50 nA VEB = 10V, IC = 0 hFE 10,000 20,000 14,000 100,000 200,000 140,000 ¾ IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 500mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 1.2 1.5 V IC = 50mA, IB = 0.5mA IC = 500mA, IB = 0.5mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 2.0 V IC = 500mA, IB = 0.5mA Base-Emitter On Voltage VBE(ON) ¾ 1.75 V IC = 50mA, VCE =5.0V ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8.0 Typical pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 15 Typical pF VEB = 0.5V, f = 1.0MHz, IC = 0 Note: 3. Short duration pulse test used to minimize self-heating effect. 400 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) Note 2 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 IC IB = 1000 TA = -50°C TA = 25°C TA = 150°C 1 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30048 Rev. 8 - 2 2 of 4 www.diodes.com 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current MMBT6427 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VBE(ON), BASE EMITTER VOLTAGE (V) 1,000,000 hFE, DC CURRENT GAIN VCE = 5V TA = 150°C 100,000 10,000 TA = 25°C TA = -50°C 1,000 VCE = 5V TA = 25°C TA = 150°C 1 0.1 100 10 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1000 100 TA = -50°C IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current Ordering Information (Note 4) Notes: Device Packaging Shipping MMBT6427-7-F SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K1D = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K1D Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30048 Rev. 8 - 2 3 of 4 www.diodes.com MMBT6427 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30048 Rev. 8 - 2 4 of 4 www.diodes.com MMBT6427