DIODES ZXTN25100DZ

ZXTN25100DZ
100V NPN high gain transistor in SOT89
Summary
BVCEX > 180V
BVCEO > 100V
BVECO > 6V
IC(cont) = 2.5A
VCE(sat) < 100mV @ 1A
RCE(sat) = 80m⍀
PD = 2.4W
Complementary part number ZXTP25100CZ
Description
C
Packaged in the SOT89 outline this new low saturation NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
B
Features
•
High power dissipation SOT89 package
•
High gain
•
Low saturation voltage
•
180V forward blocking voltage
•
6V reverse blocking voltage
E
Applications
E
•
PSU start up switch
•
DC - DC converters
•
Motor drive
•
Relay, lamp and solenoid drive
B
Ordering information
Device
C
C
Pinout - top view
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
ZXTN25100DZTA
Device marking
1K9
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ZXTN25100DZ
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
180
V
Collector-Emitter voltage (forward blocking)
VCEX
180
V
Collector-Emitter voltage
VCEO
100
V
Emitter-Collector voltage (reverse blocking)
VECO
6
V
Emitter-Base voltage
VEBO
7
V
Continuous Collector current(c)
IC
2.5
A
Base current
IB
1
A
Peak pulse current
ICM
3.5
A
Power dissipation at TA =25°C(a)
PD
1.1
W
8.8
mW/°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
2.4
W
19.2
mW/°C
4.46
W
35.7
mW/°C
W
153
mW/°C
Tj, Tstg
-55 to +150
°C
Linear derating factor
Operating and storage temperature range
W
mW/°C
19.2
PD
Power dissipation at TC =25°C(e)
1.8
14.4
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
R⍜JA
117
°C/W
Junction to ambient(b)
R⍜JA
68
°C/W
Junction to ambient(c)
R⍜JA
51
°C/W
Junction to ambient(d)
R⍜JA
28
°C/W
Junction to case(e)
R⍜JC
7.95
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
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ZXTN25100DZ
Thermal characteristics
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ZXTN25100DZ
Thermal characteristics
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ZXTN25100DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
Min.
180
Typ.
220
BVCEX
180
220
V
IC = 100μA, RBE < 1kΩ or
-1V > VBE > 0.25V
BVCEO
100
130
V
IC = 10mA (*)
BVECX
6
8.2
V
IE = 100μA, RBC < 1kΩ or
0.25V > VBC > -0.25V
BVECO
6
8.7
V
IE = 100μA
BVEBO
7
8.3
V
IE = 100μA
Collector-Emitter cut-off
current
ICEX
Emitter cut-off current
IEBO
Collector-Emitter
saturation voltage
<1
Max.
Unit
V
Conditions
IC = 100μA
50
0.5
100
nA
μA
nA
<1
50
nA
VEB = 5.6V
VCE(sat)
120
80
220
170
100
345
mV
mV
mV
IC = 0.5A, IB = 10mA(*)
IC = 1A, IB = 100mA(*)
IC = 2.5A, IB = 250mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
935
1000
mV
IC = 2.5A, IB = 250mA(*)
VBE(on)
890
950
mV
IC = 2.5A, VCE = 2V(*)
450
170
60
20
900
Transition frequency
fT
175
Input capacitance
Cibo
154
Output capacitance
Cobo
8.7
Delay time
td
16.4
ns
Rise time
tr
115
ns
Storage time
ts
763
ns
Fall time
tf
158
ns
ICBO
hFE
300
120
40
VCB = 180V
VCB =180V,Tamb=100°C
VCE = 100V, RBE < 1kΩ or
-1V < VBE < 0.25V
IC = 10mA, VCE = 2V(*)
IC = 0.5A, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
IC = 2.5A, VCE = 2V(*)
MHz
IC = 50mA, VCE = 10V
f = 100MHz
250
pF
VEB = 0.5V, f = 1MHz(*)
15
pF
VCB = 10V, f = 1MHz(*)
IC = 500mA, VCC = 10V,
IB1 = -IB2 = 50mA
NOTES:
(*)Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
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ZXTN25100DZ
Typical characteristics
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ZXTN25100DZ
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN25100DZ
Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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1. are intended to implant into the body
or
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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