DIODES ZXMP6A18DN8TA

ZXMP6A18DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
SO8
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• Disconnect switches
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A18DN8TA
7’‘
12mm
500 units
ZXMP6A18DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMP
6A18
Top view
ISSUE 1 - MAY 2005
1
ZXMP6A18DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-60
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain [email protected] GS =10V; T A =25⬚C (b)(d)
@V GS =10V; T A =70⬚C (b)(d)
@V GS =10V; T A =25⬚C (a)(d)
ID
-4.8
-3.8
-3.7
A
A
A
Pulsed Drain Current (c)
I DM
-23
A
Continuous Source Current (Body Diode)
(b)
IS
-3.3
A
Pulsed Source Current (Body Diode) (c)
I SM
-23
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)(d)
R θJA
100
°C/W
Junction to Ambient
(b)(e)
R θJA
69
°C/W
Junction to Ambient
(b)(d)
R θJA
58
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
ISSUE 1 - MAY 2005
2
ZXMP6A18DN8
CHARACTERISTICS
ISSUE 1 - MAY 2005
3
ZXMP6A18DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
Input Capacitance
TYP.
MAX.
UNIT
CONDITIONS
STATIC
V
I D =-250µA, V GS =0V
-1.0
␮A
V DS =-60V, V GS =0V
100
nA
V
I =-250␮A,
D
V DS = V GS
⍀
⍀
V GS =-10V, I D =-3.5A
V GS =-4.5V, I D =-2.9A
8.7
S
V DS =-15V,I D =-3.5A
C iss
1580
pF
Output Capacitance
C oss
160
pF
Reverse Transfer Capacitance
C rss
140
pF
Turn-On Delay Time
t d(on)
4.6
ns
Rise Time
tr
5.8
ns
Turn-Off Delay Time
t d(off)
55
ns
Fall Time
tf
23
ns
Gate Charge
Qg
23
nC
Total Gate Charge
Qg
44
nC
Gate-Source Charge
Q gs
3.9
nC
Gate-Drain Charge
Q gd
9.8
nC
V SD
-0.85
DYNAMIC
-1.0
V GS =⫾20V, V DS =0V
0.055
0.080
(3)
V DS =-30 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
V DD =-30V, I D =-1A
R G ≅6.0⍀, V GS =-10V
V DS =-30V,V GS =-5V,
I D =-3.5A
V DS =-30V,V GS =-10V,
I D =-3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T J =25°C, I S =-4.2A,
V GS =0V
T J =25°C, I F =-2.1A,
di/dt= 100A/µs
t rr
37
ns
Q rr
56
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2005
4
ZXMP6A18DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2005
5
ZXMP6A18DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2005
6
ZXMP6A18DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2005
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MAY 2005
7