KEC BFS20 Epitaxial planar npn transistor Datasheet

SEMICONDUCTOR
BFS20/BF599
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
B
L
MAXIMUM RATING (Ta=25
L
2
UNIT
H
RATING
A
SYMBOL
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
P
V
IC
25
mA
Emitter Current
IE
-25
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
Tstg
-65 150
M
K
Collector Current
J
5
N
BF599
1
P
4
VEBO
C
BFS20
Emitter-Base Voltage
3
G
CHARACTERISTIC
D
)
MILLIMETERS
_ 0.20
2.93 +
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
1. EMITTER
Storage Temperature Range
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=10 A, IE=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=2mA, IB=0
25
-
-
V
V(BR)EBO
IE=10 A, IC=0
-
-
V
Emitter-Base
BFS20
Breakdown Voltage
BF599
BFS20
Collector Cut-off Current
ICBO
BF599
DC Current Gain
BFS20
Base-Emitter Voltage
BF599
BFS20
Transition Frequency
BF599
-
100
nA
VCB=20V, IE=0, Ta=150
-
-
10
A
VCB=40V, IE=0
-
-
100
nA
40
-
-
-
-
750
900
-
750
-
275
550
-
-
550
-
-
0.35
-
VBE(ON)
VCE=10V, IC=7mA
mV
VCE=10V, IC=7mA, f=100MHz
VCB=10V, f=1MHz, IE=0
MHz
pF
Marking
MARK SPEC
TYPE
MARK
BFS20
G1
BF599
G2
1999. 11. 30
-
VCE=10V, IC=7mA
fT
5
VCB=20V, IE=0
hFE
Cob
Collector Output Capacitance
4
Revision No : 2
Lot No.
Type Name
G1
Type Name
Lot No.
G2
1/1
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