Panasonic MA3X791 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Average forward
current
Single
Unit
VR
30
V
VRRM
30
V
IFM
300
mA
Series*2
1.45
0.95
+ 0.1
+ 0.1
0.16 − 0.06
0.8
+ 0.2
1.1 − 0.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
JEDEC : TO-236
3 : Cathode 1
EIAJ : SC-59
Anode 2
Mini Type Package (3-pin)
200
IF(AV)
100
Series*2
Non-repetitive peak forward
surge current*1
3
0 to 0.1
Rating
1
2
■ Absolute Maximum Ratings Ta = 25°C
Symbol
1.9 ± 0.2
+ 0.2
• Two MA3X786s are contained in one package (series connection)
• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
0.65 ± 0.15
1.5 − 0.05
0.95
2.9 − 0.05
■ Features
Parameter
+ 0.25
0.65 ± 0.15
0.4 − 0.05
For super-high speed switching circuit
For small current rectification
Marking Symbol: M4A
mA
70
Internal Connection
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1
3
2
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
15
µA
0.55
V
Reverse current (DC)
IR
VR = 30 V
Forward voltage (DC)
VF
IF = 100 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
20
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
2
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3X791
Schottky Barrier Diodes (SBD)
IF  V F
VF  Ta
1
IR  VR
10−2
0.8
0.7
75°C
25°C
− 20°C
10−3
10−4
0.6
0.5
IF = 100 mA
0.4
0.3
0.2
0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
25°C
10−7
0
IR  T a
40
80
120
160
200
0
5
10
15
20
25
30
Reverse voltage VR (V)
IF(surge)  tW
Ct  VR
1 000
30
Terminal capacitance Ct (pF)
VR = 30 V
3V
1V
100
10
1
25
20
15
10
5
0
0
40
80
120
160
Ambient temperature Ta (°C)
200
Forward surge current IF(surge) (A)
Ta = 25°C
1 000
Reverse current IR (µA)
10−5
Ambient temperature Ta (°C)
10 000
0.1
−40
75°C
3 mA
0
−40
0.6
10−4
10−6
10 mA
0.1
2
Reverse current IR (A)
Forward voltage VF (V)
Forward current IF (A)
Ta = 125°C
10−2
10−5
Ta = 125°C
10−3
10−1
0
5
10
15
20
25
Reverse voltage VR (V)
30
300
IF(surge)
tW
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
10
Pulse width tW (ms)
30
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