DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 150mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR) Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3020B-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.011 grams (approximate) • • • • • • S DFN3020B-8 K G D Top View Bottom View Maximum Ratings – TOTAL DEVICE Symbol PD RθJA TJ, TSTG Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) A D S D G Bottom View Pin Configuration Value 1.5 85 -55 to +150 Unit W °C/W °C @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 ±12 -2.9 -10 Units V V A A Symbol VRRM VRWM VR VR(RMS) IO Value Unit 40 V 28 1 V A IFSM 3 A @TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load 1. 2. 3. 4. K @TA = 25°C unless otherwise specified Maximum Ratings – P-CHANNEL MOSFET – Q1 Notes: A A Equivalent Circuit Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Maximum Ratings – SBR – D1 K Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 1 of 7 www.diodes.com April 2009 © Diodes Incorporated DMS2120LFWB Electrical Characteristics – P-CHANNEL MOSFET – Q1 Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 ±800 V μA -0.45 ⎯ -1.3 V 70 84 100 95 120 150 mΩ |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ 8 0.42 ⎯ -1.2 S V Ciss Coss Crss ⎯ ⎯ ⎯ 632 65 54 ⎯ ⎯ ⎯ pF pF pF IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Electrical Characteristics – SBR – D1 Symbol V(BR)R Forward Voltage VF Reverse Current (Note 5) IR Notes: nA Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.0A VDS = -10V, VGS = 0V f = 1.0MHz @ TA = 25ºC unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 5) Min 40 ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 0.42 0.49 30 ⎯ Unit V V μA Test Condition IR = 1mA IF = 0.5A IF = 1.0A VR = 20V 5. Short duration pulse test used to minimize self-heating effect. Q1, P-CHANNEL MOSFET 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V 8 8 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified VGS = -2.0V 6 VGS = -1.5V 4 6 4 TA = 150°C 2 2 VGS = -1.0V 0 0 TA = -55°C 0 0.5 5 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) 2 Fig. 2 Typical Transfer Characteristics SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 TA = 85°C TA = 25°C VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics TA = 125°C 2 of 7 www.diodes.com April 2009 © Diodes Incorporated DMS2120LFWB RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 0.1 0.08 VGS = -1.8V 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.12 0.1 VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.0 0.8 0.6 -50 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 0.14 8 1.6 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 8 0.11 0.09 VGS = -2.5V ID = -2A 0.07 VGS = -4.5V ID = -5A 0.05 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) NEW PRODUCT Q1, P-CHANNEL MOSFET - Continued 0.14 1,000 Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 20 SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 3 of 7 www.diodes.com 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature April 2009 © Diodes Incorporated DMS2120LFWB Q1, P-CHANNEL MOSFET - Continued -IS, SOURCE CURRENT (A) 8 6 TA = 25°C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current D1, SBR IF, INSTANTANEOUS FORWARD CURRENT (A) 0.7 0.6 PD, POWER DISSIPATION (W) NEW PRODUCT 10 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 10 Forward Power Dissipation SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 1 TA = 150°C 0.1 0.01 TA = 125°C TA = 85°C TA = 25°C 0.001 0.0001 0 4 of 7 www.diodes.com TA = -55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 11 Typical Forward Characteristics April 2009 © Diodes Incorporated DMS2120LFWB D1, SBR - Continued 10,000 T A = 125°C 1,000 C, CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT(uA) TA = 150°C 1,000 100 TA = 85°C 10 TA = 25°C 1 0.01 0 100 10 1 0.1 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 12 Typical Reverse Characteristics 1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 13 Total Capacitance vs. Reverse Voltage TA, DERATED AMBIENT TEMPERATURE (°C) 150 1.4 1.2 Note 2 1.0 0.8 0.6 0.4 0.2 0 25 125 100 75 50 25 0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 14 Forward Current Derating Curve Ordering Information 0 175 10 20 30 VR, DC REVERSE VOLTAGE (V) Fig. 15 Operating Temperature Derating 40 (Note 6) Part Number DMS2120LFWB-7 Notes: f = 1MHz 0.1 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) NEW PRODUCT 10,000 Case DFN3020B-8 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MF = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) MF YM Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 Mar 3 2010 X Apr 4 2011 Y May 5 SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 Jun 6 5 of 7 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D April 2009 © Diodes Incorporated DMS2120LFWB Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 NEW PRODUCT A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X1 Dimensions a b C G X1 X2 Y1 Y2 Y1 a G b Y2 X2 SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 6 of 7 www.diodes.com Value (in mm) 0.09 0.365 0.65 0.285 0.4 1.12 0.5 0.73 April 2009 © Diodes Incorporated DMS2120LFWB IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 4 - 2 7 of 7 www.diodes.com April 2009 © Diodes Incorporated