DMP3160L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • Low On-Resistance: RDS(ON) < 122mΩ @ VGS = -10V, ID = -2.7A RDS(ON) < 190mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 4 and 6) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate TOP VIEW Maximum Ratings S G Source TOP VIEW EQUIVALENT CIRCUIT @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) VGS = -10V Steady State Units V V IDM Value -30 ±20 -2.7 -2 -8 Symbol PD RθJA TJ, TSTG Value 1.08 115 -55 to +150 Units W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. 6. Symbol Min Typ Max Unit BVDSS IDSS -30 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ -800 ±80 ±800 VGS(th) -1.3 -1.8 -2.1 V RDS (ON) ⎯ 97 165 122 190 mΩ |Yfs| VSD ⎯ ⎯ 3.6 ⎯ ⎯ -1.26 S V Ciss Coss Crss ⎯ ⎯ ⎯ 227 64 36 ⎯ ⎯ ⎯ pF pF pF nA Test Condition VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±15V, VDS = 0V VDS = VGS, ID = -250μA VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2.0A VDS = -5V, ID = -2.7A VGS = 0V, IS = -2.7A VDS = -10V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. t ≤5 sec. No purposefully added lead. Halogen and Antimony Free. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. DMP3160L Document number: DS31268 Rev. 5 - 2 1 of 4 www.diodes.com June 2010 © Diodes Incorporated DMP3160L 3 5.0 4.5 -VDS = 5V Pulsed 2.5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 2 1.5 1 0.5 0.5 0 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0.3 0.18 RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.2 0.16 VGS = -4.5V 0.14 0.12 0.1 0.26 VGS = -4.5V TA = 150°C 0.22 TA = 125°C TA = 85°C 0.18 T A = 25°C 0.14 VGS = -10V T A = -55°C 0.1 0.08 0 0 0.5 1 1.5 2 2.5 3 -ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current and Gate Voltage 0.5 1 1.5 2 2.5 3 -ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage 1.5 1.3 1.2 f = 1MHz VGS = -10V ID = -2.7A C, CAPACTIANCE (pF) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 VGS = -4.5V ID = -2.0A 1.1 1.0 0.9 C iss C oss Crss 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature DMP3160L Document number: DS31268 Rev. 5 - 2 2 of 4 www.diodes.com 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 30 June 2010 © Diodes Incorporated DMP3160L 10 1 ID = -250µA 1.9 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.2 1.6 1.3 0.1 0.01 T A = 150°C TA = 125°C TA = 85°C 0.001 TA = 25°C T A = -55°C 1 -50 0.0001 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Voltage vs. Ambient Temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -VSD, SOURCE DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 7) Part Number DMP3160L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YW PS3 Date Code Key Year Code 2007 U Month Code 2008 V Jan 1 Feb 2 PS3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2009 W Mar 3 2010 X Apr 4 May 5 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M K1 D J F G DMP3160L Document number: DS31268 Rev. 5 - 2 L 3 of 4 www.diodes.com SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm June 2010 © Diodes Incorporated DMP3160L Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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