Diodes DMN3150LW N-channel enhancement mode field effect transistor Datasheet

DMN3150LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features

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


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Mechanical Data


Low On-Resistance:
RDS(ON) < 88mΩ @ VGS = 4.5V
RDS(ON) < 138mΩ @ VGS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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
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Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
SOT323
D
D
G
G
S
S
Top View
Ordering Information
(Note 4)
Part Number
DMN3150LW-7
Notes:
Pin Configuration
Internal Schematic
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
31N
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
DMN3150LW
Document number: DS31514 Rev. 2 - 2
~
~
Feb
2
YM
Marking Information
2016
D
Mar
3
31N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
2017
E
Apr
4
May
5
2018
F
Jun
6
1 of 5
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2019
G
Jul
7
2020
H
Aug
8
2021
I
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
January 2016
© Diodes Incorporated
DMN3150LW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Drain Current (Note 5)
Body-Diode Continuous Current (Note 5)
Symbol
VDSS
VGSS
TA = +25°C
TA = +70°C
Pulsed
Value
28
12
1.6
1.2
6.4
1.5
ID
IDM
IS
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RJA
TJ, TSTG
Value
350
357
-55 to +150
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
28




800
80
800
V
nA
V
IGSS


ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
|Yfs|
VSD
0.62




0.94
73
115
5.4

1.4
88
138

1.16
Ciss
Coss
Crss



305
74
48



Gate-Body Leakage
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Unit
mW
°C/W
°C
nA
m
S
V
pF
pF
pF
Test Condition
VGS = 0V, ID = 250A
VDS = 28V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±19V, VDS = 0V
VDS = VGS, ID = 250A
VGS = 4.5V, ID = 1.6A
VGS = 2.5V, ID = 1.2A
VDS = 5V, ID = 2.7A
VGS = 0V, IS = 1.5A
VDS = 5V, VGS = 0V
f = 1.0MHz
5. Device mounted on 1in2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN3150LW
Document number: DS31514 Rev. 2 - 2
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January 2016
© Diodes Incorporated
DMN3150LW
8
8
VDS = 5V
Pulsed
6
6
4
4
2
2
0
0
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
0.16
0.12
C, CAPACITANCE (pF)
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
1 MHz
f f== 1MHz
o
25癈
TTAA==25
C
VGS = 2.5V
0.08
VGS = 4.5V
VGS = 10V
Ciss
Coss
0.04
Crss
0
0
2
4
6
ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance
vs. Drain Current and Gate Voltage
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
1.4
1.0
0.8
0.6
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.2
1.6
0.4
1.4
VGS = 4.5V
ID = 1.6A
1.2
1.0
0.8
0.6
-50
0
25
50
75 100 125 150
o
TA, AMBIENT TEMPERATURE ((C)
C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMN3150LW
Document number: DS31514 Rev. 2 - 2
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January 2016
© Diodes Incorporated
DMN3150LW
8
6
4
2
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT323
D
A2
c
A1
e
a
L
b
E
E1
F
SOT323
Dim Min Max
Typ
A1 0.00 0.10
0.05
A2 0.90 1.00
0.95
b
0.25 0.40
0.30
c
0.10 0.18
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1 1.15 1.35
1.30
e
0.650 BSC
e1 1.20 1.40
1.30
F 0.375 0.475 0.425
L
0.25 0.40
0.30
a
8°
All Dimensions in mm
e1
DMN3150LW
Document number: DS31514 Rev. 2 - 2
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DMN3150LW
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT323
X
Y
Y1
Dimensions
C
G
X
Y
Y1
G
Value
(in mm)
0.650
1.300
0.470
0.600
2.500
C
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(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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DMN3150LW
Document number: DS31514 Rev. 2 - 2
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January 2016
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