LRC LMSD1819A-RT1G General purpose amplifier transistor Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Amplifier
Transistor
LMSD1819A-RT1G
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
3
1
2
Features
•
•
•
•
SC-70/SOT–323
High hFE, 210−460
Low VCE(sat), < 0.5 V
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
Machine Model > 400 V
• We declare that the material of product compliance with
RoHS requirements.
3
COLLECTOR
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Symbol
Max
Unit
PD
150
mW
Rating
Collector Current − Continuous
Collector Current − Peak
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation (Note 1)
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Ordering Information
Device
Marking
Shipping
LMSD1819A-RT1G
ZR
3000/Tape&Reel
LMSD1819A-RT1G
ZR
10000/Tape&Reel
1/4
LESHAN RADIO COMPANY, LTD.
LMSD1819A-RT1G
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
−
Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0)
V(BR)EBO
7.0
−
Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
−
0.1
mA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
−
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
90
340
−
VCE(sat)
−
0.5
−
Collector-Emitter Saturation Voltage (Note 2)
(IC = 100 mAdc, IB = 10 mAdc)
Vdc
250
60
IC, COLLECTOR CURRENT (mA)
PD , POWER DISSIPATION (MILLIWATTS)
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
140 mA
120 mA
40
100 mA
30
80 mA
60 mA
20
40 mA
10
0
150
160 mA
TA = 25°C
50
IB = 20 mA
0
2
4
6
VCE, COLLECTOR VOLTAGE (V)
Figure 2. IC − VCE
1000
DC CURRENT GAIN
TA = 75°C
TA = 25°C
TA = − 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE = 10 V
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Derating Curve
8
2
TA = 25°C
1.5
1
0.5
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
100
Figure 4. Collector Saturation Region
2/4
LESHAN RADIO COMPANY, LTD.
LMSD1819A-RT1G
900
20
Cib, INPUT CAPACITANCE (pF)
700
600
500
400
TA = 25°C
VCE = 5 V
300
200
18
16
14
12
100
0
0.2
0.5
1
5
10
20
40
60
80
100
10
150 200
1
0
2
IC, COLLECTOR CURRENT (mA)
VEB (V)
Figure 5. On Voltage
Figure 6. Capacitance
3
4
7
6
C ob, CAPACITANCE (pF)
COLLECTOR VOLTAGE (mV)
800
5
4
3
2
1
0
10
20
30
40
VCB (V)
Figure 7. Capacitance
3/4
LESHAN RADIO COMPANY, LTD.
LMSD1819A-RT1G
SC−70 (SOT−323)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
3
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
L
A1
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
4/4
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