DIODES FCX690B

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
FCX690B
ISSSUE 1 - MARCH 1999
FEATURES
*
2W POWER DISSIPATION
*
*
*
6A Peak Pulse Current
Gain of 400 @IC=1Amp
Very Low Saturation Voltage
Complimentary Type Partmarking Detail -
C
E
FCX790A
690
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current **
ICM
6
A
Continuous Collector Current
IC
2
A
Power Dissipation at Tamb=25°C
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX690B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
Min
Typ
Max
UNIT
CONDITIONS.
45
V
IC=100A
V(BR)CEO
45
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100A
Collector Cut-Off Current
ICBO
0.1
A
VCB=35V
Emitter Cut-Off Current
IEBO
0.1
A
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
80
300
mV
mV
IC=0.1A, IB=0.5mA *
IC=1A, IB=5mA *
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA *
Base-Emitter
Turn-On Voltage
VBE(on)
0.85
V
IC=1A, VCE=2V *
Static Forward Current
Transfer
Ratio
hFE
500
400
150
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=100mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
16
pF
VCB=10V, f=1MHz
33
1300
ns
ns
IC=500mA, IB1=IB2=50mA
VCC=10V
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
FCX690B
TYPICAL CHARACTERISTICS
Tamb=25°C
IC/IB=200
IC/IB=100
IC/IB=10
0.8
VCE(sat) - (Volts)
VCE(sat) - (Volts)
0.8
0.6
0.4
0.2
0.01
1
0.6
0.4
0
10
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE=2V
1.6
1.0
1K
0.8
0.6
500
0.4
0.2
VBE(sat) - (Volts)
1.5K
1.2
1.4
-55°C
+25°C
+100°C
+175°C
IC/IB=100
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
10
1
0
1.4
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=2V
1.0
0.8
0.6
0.4
0.2
0
1
hFE v IC
1.2
0
0.1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
1.6
0.01
IC - Collector Current (Amps)
10
VBE - (Volts)
0.01
IC - Collector Current (Amps)
hFE - Typical Gain
hFE - Normalised Gain
0.1
+100°C
+25°C
-55°C
1.4
IC/IB=100
0.2
0
1.6
-55°C
+25°C
+100°C
+175°C
0.01
0.1
1
10
10
Single Pulse Test at Tamb=25°C
1
0.1
0.01
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
1
10
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
100