SAVANTIC BU2520DF Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BU2520DF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of large screen colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
IC
Collector current (DC)
10
A
ICM
Collector current-peak
25
A
IB
Base Collector current (DC)
6
A
IBM
Base current-peak
9
A
Ptot
Total power dissipation
45
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
BU2520DF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
1.1
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
TC=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
300
mA
hFE-1
DC current gain
IC=1.0A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
VF
Diode forward voltage
IF=6A
CC
Collector capacitance
f=1MHz;VCB=10V
V
13.5
100
V
13
5
7
9.5
2.2
2
UNIT
115
V
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU2520DF
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