ON MJE15032 8.0 amperes power transistors complementary silicon 250 volts, 50 watt Datasheet

MJE15032 (NPN),
MJE15033 (PNP)
Preferred Devices
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
http://onsemi.com
Features
• DC Current Gain Specified to 5.0 Amperes
•
•
•
•
•
•
hFE = 70 (Min) @ IC = 0.5 Adc
= 10 (Min) @ IC = 2.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033
High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO−220AB Compact Package
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Machine Model C
Human Body Model 3B
Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Value
Unit
VCEO
250
Vdc
Collector−Base Voltage
VCB
250
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
8.0
16
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
50
0.40
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
TJ, Tstg
– 65 to
+ 150
_C
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
2.5
_C/W
MJE15032G
Thermal Resistance,
Junction−to−Ambient
RqJA
62.5
_C/W
MJE15033
Collector Current − Continuous
− Peak
Operating and Storage Junction
Temperature Range
1
2
A YW
MJE1503xG
AKA
3
MJE1503x = Specific Device Code
x
= 2 or 3
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Package
ORDERING INFORMATION
Device
Package
Shipping †
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MJE15032
MJE15033G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 3
1
Publication Order Number:
MJE15032/D
MJE15032 (NPN), MJE15033 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
250
−
Vdc
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
10
mAdc
70
50
10
−
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.5
Vdc
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−
1.0
Vdc
fT
30
−
MHz
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
http://onsemi.com
2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJE15032 (NPN), MJE15033 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500 1.0 k
Figure 1. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
100
100 ms
10
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 2 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
50ms
250ms
10ms
0.1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
Figure 2. MJE15032 & MJE15033
Safe Operating Area
PD, POWER DISSIPATION (WATTS)
0.01
1.0
TA
TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
3
120
140
160
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
PNP − MJE15033
1000
150°C
h FE, DC CURRENT GAIN
h FE, DC CURRENT GAIN
1000
25°C
100
−55°C
10
1.0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
150°C
100
−55°C
10
1.0
10
25°C
0.1
10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
10
−55°C
1.0
25°C
150°C
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
25°C
150°C
0.1
10
−55°C
1.0
0.1
10
10
100
150°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. PNP − MJE15033
VCE = 5 V VBE(on) Curve
Figure 6. NPN − MJE15032
VCE = 5 V VBE(on) Curve
25°C
1.0
−55°C
0.1
10
25°C
1.0
−55°C
150°C
0.1
0.01
10
Figure 5. PNP − MJE15033
VCE = 5 V DC Current Gain
Figure 4. NPN − MJE15032
VCE = 5 V DC Current Gain
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
0.01
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. PNP − MJE15033
VCE(sat) IC/IB = 10
Figure 8. NPN − MJE15032
VCE(sat) IC/IB = 10
http://onsemi.com
4
10
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
PNP − MJE15033
100
150°C
10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100
25°C
1.0
−55°C
0.1
0.01
25°C
10
−55°C
1.0
0.1
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
0.01
10
0.1
Figure 10. NPN − MJE15032
VCE(sat) IC/IB = 20
V BE , BASE EMITTER VOLTAGE (VOLTS)
V BE , BASE EMITTER VOLTAGE (VOLTS)
10
10
−55°C
25°C
150°C
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. PNP − MJE15033
VCE(sat) IC/IB = 20
10
1.0
150°C
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
1.0
25°C
150°C
0.1
10
−55°C
0.1
Figure 12. NPN − MJE15032
VBE(sat) IC/IB = 10
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 13. PNP − MJE15033
VBE(sat) IC/IB = 10
http://onsemi.com
5
10
MJE15032 (NPN), MJE15033 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
SEATING
PLANE
−T−
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MJE15032/D
Similar pages