A Product Line of Diodes Incorporated ZTX796A PN P SILICON PLANAR MED IU M POW ER HIGH GA IN TR ANSISTOR Please click here to visit our online spice models database. Features • • • Mechanical Data 200 Volt VCEO Gain of 250 at IC=0.3 Amps Very low saturation voltage • Case: E-Line E-Line TO92 Compatible Rounded face C B E Pin Configuration Bottom View Maximum Ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value -200 -200 -5 -1 -0.5 Unit V V V A A Symbol Ptotp Value 1.5 1 5.7 175 116 70 -55 to +200 Unit W W mW /°C °C/W °C/W °C/W °C Thermal Characteristics Characteristic Practical Power Dissipation (Note 1) Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient1 (Note 2) Thermal Resistance Junction to Ambient2 (Note 2) Thermal Resistance Junction to Case Operating and Storage Temperature Range Notes: Ptot RθJA1 RθJA2 RθJC TJ, TSTG 1. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 2. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX796A Document Number DS31908 Rev. 2 - 2 1 of 4 www.diodes.com September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZTX796A PN P SILICON PLANAR MED IU M POW ER HIGH GA IN TR ANSISTOR Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -200 -200 -5 - Typ - Max -0.1 -0.1 Unit V V V µA µA Collector-Emitter Saturation Voltage (Note 3) VCE(sat) - - -0.2 -0.3 -0.3 mV mV mV Base-Emitter Saturation Voltage (Note 3) Base-Emitter Turn-On Voltage (Note 3) VBE(sat) VBE(on) - -0.67 -0.95 mV mV hFE 300 300 250 100 - 800 Transition Frequency fT 100 - - MHz Input Capacitance Output Capacitance Cibo Cobo ton - 225 12 100 - pF pF ns toff - 3200 - ns Static Forward Current Transfer Ratio (Note 3) Switching Times Notes: Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -150V VEB = -4V IC = -50mA, IB = -2mA IC = -100mA, IB = -5mA IC = -200mA, IB = -20mA IC = -200mA, IB = -20mA IC = -200mA, VCE = -10V IC = -10mA, VCE = -5V IC = -1A, VCE = -5V IC = -2A, VCE = -5V IC = -5A, VCE = -5V VCE = -5V, IC = -50mA f = 50MHz VEB = -0.5V. f = 1MHz VCB = -10V. f = 1MHz VCC = -50V, IC = -100mA IB1 = -IB2 = -10mA 3. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2% ZTX796A Document Number DS31908 Rev. 2 - 2 2 of 4 www.diodes.com September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZTX796A PN P SILICON PLANAR MED IU M POW ER HIGH GA IN TR ANSISTOR ZTX796A Document Number DS31908 Rev. 2 - 2 3 of 4 www.diodes.com September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZTX796A PN P SILICON PLANAR MED IU M POW ER HIGH GA IN TR ANSISTOR IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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