Fairchild FDPF770N15A N-channel powertrenchâ® mosfet 150v, 10a, 77mî© Datasheet

N-Channel PowerTrench® MOSFET
150V, 10A, 77mΩ
Features
Description
• RDS(on) = 60mΩ ( Typ.)@ VGS = 10V, ID = 10A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
Application
• High Power and Current Handling Capability
• DC to DC Converters
• RoHS Compliant
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC Motor Drives and Uninterruptible Power Supplies
• Off-line UPS
D
G
GD S
TO-220F
(Retractable)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
Ratings
150
Units
V
±20
V
-Continuous (TC = 25oC,Silicon Limited)
10
ID
Drain Current
-Continuous (TC = 100oC,Silicon Limited)
7
IDM
Drain Current
- Pulsed
(Note 1)
40
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
35
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
A
20
W
0.16
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
5.9
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2011 Fairchild Semiconductor Corporation
FDPF770N15A Rev. A1
1
Units
o
C/W
www.fairchildsemi.com
FDPF770N15A N-Channel PowerTrench® MOSFET
April 2011
FDPF770N15A
Device Marking
FDPF770N15A
Device
FDPF770N15A
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
150
-
-
V
-
0.1
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 120V, VGS = 0V
-
-
1
VDS = 120V, TC = 125oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.0
-
4.0
V
-
60
77
mΩ
-
15
-
S
-
575
765
pF
-
64
85
pF
pF
ID = 250μA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
VDS = 75V, VGS = 0V
f = 1MHz
-
VDS = 75V,VGS = 0V
VDS = 75V,ID = 10A
VGS = 10V
(Note 4.5)
Drain Open,f = 1MHz
3.9
-
113
-
pF
8.6
11.2
nC
nC
3.2
-
-
1.2
-
nC
-
1.9
-
nC
-
0.5
-
Ω
-
12
34
ns
-
8
26
ns
-
15
40
ns
-
3
16
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 75V, ID = 10A
VGS = 10V, RGEN = 4.7Ω
(Note 4.5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
40
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
-
1.25
V
trr
Reverse Recovery Time
-
59
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A,VDD = 75V
dIF/dt = 100A/μs
(Note 4)
-
124
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3mH, ISD = 4.8A
3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDPF770N15A Rev. A1
2
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FDPF770N15A N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 2. Transfer Characteristics
50
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
Figure 1. On-Region Characteristics
100
10
o
150 C
o
25 C
o
-55 C
*Notes:
1. 250μs Pulse Test
1
o
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
1
7
3
4
5
6
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.10
100
0.09
0.08
VGS = 10V
0.07
VGS = 20V
0.06
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
0.05
2. 250μs Pulse Test
*Note: TC = 25 C
0
10
20
30
ID, Drain Current [A]
40
1
0.4
50
Figure 5. Capacitance Characteristics
1.4
10
VGS, Gate-Source Voltage [V]
Ciss
100
Coss
10
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
1000
Capacitances [pF]
7
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.5
0.1
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
FDPF770N15A Rev. A1
6
4
2
Crss
*Note: ID = 10A
0
1
10
VDS, Drain-Source Voltage [V]
VDS = 30V
VDS = 75V
VDS = 120V
8
100 200
3
0
3
6
Qg, Total Gate Charge [nC]
9
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FDPF770N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.4
1.08
1.04
1.00
0.96
*Notes:
1. VGS = 0V
2. ID = 250μA
0.92
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
2.0
1.6
1.2
0.8
0.4
-80
160
Figure 9. Maximum Safe Operating Area
160
10
10
8
100μs
ID, Drain Current [A]
ID, Drain Current [A]
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1ms
1
Operation in This Area
is Limited by R DS(on)
0.1 *Notes:
o
10ms
100ms
DC
1. TC = 25 C
4
2
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
VGS= 10V
6
o
0.01
0.005
*Notes:
1. VGS = 10V
2. ID = 10A
o
RθJC = 5.9 C/W
0
25
200
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
0.8
EOSS, [μJ]
0.6
0.4
0.2
0.0
0
FDPF770N15A Rev. A1
30
60
90
120
VDS, Drain to Source Voltage [V]
150
4
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FDPF770N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDPF770N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
Thermal Response [ZθJC]
8
0.5
0.2
1
t1
0.05
t2
*Notes:
0.02
o
0.01
0.1
0.05 -5
10
FDPF770N15A Rev. A1
PDM
0.1
1. ZθJC(t) = 5.9 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
5
10
100
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FDPF770N15A N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDPF770N15A Rev. A1
6
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FDPF770N15A N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDPF770N15A Rev. A1
7
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FDPF770N15A N-Channel PowerTrench® MOSFET
Package Dimensions
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
FDPF770N15A Rev. A1
8
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I53
FDPF770N15A Rev. A1
9
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FDPF770N15A N-Channel PowerTrench® MOSFET
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