Sanyo ECH8621R N-channel silicon mosfet general-purpose switching device Datasheet

ECH8621R
Ordering number : EN8718
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8621R
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
Best suited for lithium battery applications.
2.5V drive.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±12
V
8
A
Drain Current (DC)
ID
V
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
40
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
1.4
W
Total Dissipation
PT
Tch
Mounted on a ceramic board (900mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Ratings
min
typ
Unit
max
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
RDS(on)1
RDS(on)2
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
RDS(on)3
RDS(on)4
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
Input Capacitance
Ciss
1250
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
240
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
210
pF
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : WF
V(BR)DSS
Conditions
20
V
0.5
1
µA
±10
µA
1.3
V
6.6
11
11
15.5
20
mΩ
S
11.2
16
21
mΩ
12
18.5
24
mΩ
13.2
22
30
mΩ
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002065 No.8718-1/4
ECH8621R
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
544
Rise Time
tr
td(off)
See specified Test Circuit.
2200
ns
See specified Test Circuit.
4400
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
tf
Qg
Total Gate Charge
3700
ns
VDS=10V, VGS=4.5V, ID=8A
15
nC
2.5
nC
5
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4.5V, ID=8A
VDS=10V, VGS=4.5V, ID=8A
Diode Forward Voltage
VSD
IS=8A, VGS=0V
Package Dimensions
unit : mm
7011A-003
0.85
7
6
0.25
2.9
0.15
5
2.3
2.8
0 to 0.02
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
4
0.3
0.9
0.25
1
0.65
V
5
Top View
1
1.2
Electrical Connection
8
8
ns
0.07
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Bottom View
Switching Time Test Circuit
VDD=10V
VIN
4V
0V
ID=4A
RL=2.5Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
Rg
G
ECH8621R
P.G
50Ω
S
Rg=1kΩ
No.8718-2/4
ECH8621R
ID -- VDS
10
12
5
1.5V
4
3
8
6
4
2
--25°C
2.0V
6
10
C
2.5V
7
Ta=7
5°
Drain Current, ID -- A
3.0 V
8
Drain Current, ID -- A
VDS=10V
3.5 V
4.5V
9
ID -- VGS
14
25°C
2
1
VGS=1.0V
1.0
1.5
Drain-to-Source Voltage, VDS -- V
0
24
ID=4A
20
2A
18
16
14
12
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
2
=
Ta
5
C
5°
--2
C
75°
°C
25
3
2
1.0
0.1
3
5
7
1.0
2
3
5
15
10
0
50
100
150
200
IT11236
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
7
0
10
IT08318
100
7
5
3
2
10000
5
Drain Current, ID -- A
td (off)
7
tf
3
tr
2
1000
7
td(on)
5
3
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT11237
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
2
Switching Time, SW Time -- ns
20
0.001
2
Drain Current, ID -- A
2
0.1
25
10
7
5
3
2
VDS=10V
7
VG
A,
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
10
10
2.5
IT08315
V
2.5
S=
1V
2
=3.
I D=
GS .0V
V
,
4A
=4
I D= , VGS
A
4
V
I D=
=4.5
VGS
,
A
4
I D=
30
IT11235
yfs -- ID
3
2.0
35
5
--50
10
2
1.5
RDS(on) -- Ta
40
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
26
1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
28
22
0.5
IT08314
RDS(on) -- VGS
30
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
2.0
--25
°C
0.5
5°C
25°C
0
Ta=
7
0
ASO
≤10µs
IDP=40A
1m
ID=8A
10
7
5
3
2
s
10
DC
ms
10
0m
op
era
s
tio
1.0
7
5
3
2
0.1
7
5
3
2
IT08319
n(
Ta
=
25
Operation in this
area is limited by RDS(on).
°C
)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
IT08322
No.8718-3/4
ECH8621R
PD -- Ta
Allowable Power Dissipation, PD -- W
1.6
Mounted on a ceramic board
(900mm2✕0.8mm) 1unit
1.5
1.4
1.2
1.0
To
t
0.8
1u
al
D
iss
ip
ni
t
at
io
n
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT08323
Note on usage : Since the ECH8621R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
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This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No.8718-4/4
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