DZT658 NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 3 2 1 4 SOT-223 Mechanical Data • • • • • • • Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.115 grams Maximum Ratings COLLECTOR 2,4 3 E C 4 2 C BASE 1 1 B 3 EMITTER TOP VIEW Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 400 400 5 0.5 1 Unit V V V A A Symbol Value Unit PD 1 W RθJA 125 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics Characteristic Power Dissipation @TA = 25°C (Note 3) Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Electrical Characteristics Characteristic Off Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current On Characteristics (Note 4) @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 400 400 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 V V V nA nA IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 320V, IE = 0 VEB = 4V, IC = 0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 40 0.075 0.06 0.08 0.3 0.25 0.5 V V V ⎯ ⎯ 110 100 85 0.9 1 V V ⎯ ⎯ ⎯ ⎯ IC = 20mA, IB = 1mA IC = 50mA, IB = 5mA IC = 100mA, IB = 10mA IC = 100mA, IB = 10mA VCE = 5V, IC = 100mA VCE = 5V, IC = 1mA VCE = 5V, IC = 100mA VCE = 10V, IC = 200mA 50 ⎯ ⎯ ⎯ ⎯ ⎯ 138 175 ⎯ 10 ⎯ ⎯ MHz pF ns ns Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(SAT) VBE(ON) DC Current Gain AC Characteristics Transition Frequency Output Capacitance Switching Times Notes: hFE fT Cobo ton toff Test Condition VCE = 20V, IC = 30mA, f = 30MHz VCB = 20V, f = 1MHz VCC = 100V, IC = 100mA IB1 = 10mA, IB2 = -20mA 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. DS31308 Rev. 2 - 2 1 of 3 www.diodes.com DZT658 © Diodes Incorporated 0.8 0.20 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 0.25 0.6 0.4 0.2 IB = 3mA 0.15 IB = 2mA 0.10 IB = 1mA 0.05 0 0 25 50 150 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature IB = 5mA IB = 4mA 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) 5 Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 250 200 150 100 50 0.01 0.1 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current DS31308 Rev. 2 - 2 1 1.0 0.1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0 0.001 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) NEW PRODUCT 1.0 2 of 3 www.diodes.com 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current DZT658 © Diodes Incorporated Ordering Information (Note 5) NEW PRODUCT Notes: Device Packaging Shipping DZT658-13 SOT-223 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf. Marking Information (Top View) YWW KN4 KN4 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout: IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31308 Rev. 2 - 2 3 of 3 www.diodes.com DZT658 © Diodes Incorporated