MSA-0336 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0336 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. • Cascadable 50 Ω Gain Block The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB Typical Gain at 1.0 GHz • 10.0 dBm Typical P1 dB at 1.0 GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 5 V 2 MSA-0336 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] 80 mA 425 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,5]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 136°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω (|S 21| 2) GP Power Gain ∆GP Gain Flatness f3 dB 3 dB Bandwidth VSWR Units Min. f = 0.1 GHz dB 11.5 f = 0.1 to 1.6 GHz dB GHz Input VSWR f = 0.1 to 3.0 GHz Typ. Max. 12.5 13.5 ±0.6 ±1.0 2.7 1.6:1 Output VSWR f = 0.1 to 3.0 GHz NF 50 Ω Noise Figure f = 1.0 GHz 1.7:1 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 23.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient dB V mV/°C 6.0 125 4.5 5.0 5.5 –8.0 Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-0336-BLKG 100 Bulk MSA-0336-TR1G 1000 7" Reel 3 MSA-0336 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .05 .05 .04 .04 .03 .02 .03 .08 .14 .21 .27 .31 .37 .51 S21 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 177 170 161 156 149 154 –104 –136 –157 –176 170 157 125 87 12.6 12.5 12.5 12.4 12.2 12.1 11.6 10.9 10.0 9.0 7.9 6.9 4.9 2.8 4.25 4.24 4.20 4.15 4.09 4.02 3.79 3.49 3.16 2.81 2.49 2.20 1.76 1.38 175 170 160 151 142 132 109 87 71 53 36 20 –10 –38 –18.6 –18.3 –18.3 –18.3 –17.9 –17.6 –16.8 –15.7 –14.9 –14.6 –13.9 –13.6 –12.9 –12.8 .118 .121 .122 .121 .128 .131 .145 .164 .180 .187 .202 .209 .226 .230 1 2 3 5 8 9 13 11 13 8 4 –1 –12 –25 .17 .17 .17 .18 .19 .20 .20 .21 .23 .24 .25 .24 .20 .22 –8 –17 –33 –47 –61 –73 –102 –133 –155 –173 178 177 165 130 Typical Performance, TA = 25°C (unless otherwise noted) 14 60 12 TC = +125°C 50 TC = +25°C Gain Flat to DC 12 TC = –55°C 10 8 6 G p (dB) 40 I d (mA) 30 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 4 0 1 2 FREQUENCY (GHz) 3 4 5 6 15 20 25 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 35 mA. 35 40 50 Figure 3. Power Gain vs. Current. 7.0 18 13 30 I d (mA) Figure 2. Device Current vs. Voltage. 12 GP 15 11 10 P1 dB 9 8 7 6.5 P1 dB (dBm) 11 P1 dB (dBm) G p (dB) 8 6 10 2 NF (dB) 10 20 4 12 I d = 50 mA NF (dB) G p (dB) 14 9 I d = 35 mA 6.0 6 5.5 6 I d = 20 mA I d = 35 mA I d = 50 mA 3 NF 5 4 –55 –25 +25 +85 +125 I d = 20 mA 0 0.1 0.2 0.3 5.0 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 35 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2739EN AV02-0302EN - April 12, 2007