DIODES ZXTN25100BFHTA

ZXTN25100BFH
100V, SOT23, medium power transistor
Summary
BVCEX > 170V
BVCEO > 100V
BVECO > 6V
IC(cont) = 3A
VCE(sat) < 80mV @ 1A
RCE(sat) = 67m
PD = 1.25W
Complementary part number ZXTP25100BFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
Low saturation voltage
•
170V forward blocking voltage
E
Applications
E
•
Lamp relay and solenoid drivers
•
General switching in automotive and industrial applications
•
Motor drive and control
C
B
Ordering information
Device
Pinout - top view
Reel size (inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
ZXTN25100BFHTA
Device marking
021
Issue 1 - May 2006
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ZXTN25100BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
170
V
Collector-emitter voltage (forward blocking)
VCEX
170
V
Collector-emitter voltage
VCEO
100
V
Emitter-collector voltage (reverse blocking)
VECO
6
V
Emitter-base voltage
VEBO
7
V
IC
3
A
Peak pulse current
ICM
9
A
Power dissipation at Tamb =25°C(a)
PD
0.73
W
5.84
mW/°C
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
1.81
W
14.5
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
RJA
171
°C/W
Junction to ambient(b)
RJA
119
°C/W
Junction to ambient(c)
RJA
100
°C/W
Junction to ambient(d)
RJA
69
°C/W
Continuous collector current(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN25100BFH
Characteristics
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ZXTN25100BFH
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
170
220
Collector-emitter breakdown
voltage (forward blocking)
BVCEX
170
210
Collector-emitter breakdown
voltage (base open)
BVCEO
100
120
V
IC = 10mA (*)
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
7
V
IE = 100A, RBC < 1k or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
6
8.4
V
IE = 100A,
Emitter-base breakdown
voltage
BVEBO
7
8
V
IE = 100A
Collector cut-off current
ICBO
Collector emitter cut-off current ICEX
Max. Unit Conditions
V
IC = 100A
IC = 100A, RBE < 1k or
-1V < VBE < 0.25V
<1
50
20
nA
A
VCB = 136V
VCB = 136V, Tamb= 100°C
-
100
nA
VCE = 136V; RBE < 1k or
-1V < VBE < 0.25V
VEB = 5.6V
Emitter cut-off current
IEBO
<1
50
nA
Collector-emitter saturation
voltage
VCE(sat)
40
55
mV I = 0,5A, I = 50mA(*)
C
B
100
135
mV I = 0,5A, I = 10mA(*)
C
B
70
80
mV I = 1A, I = 100mA(*)
C
B
200
250
mV I = 3A, I = 300mA(*)
C
B
Base-emitter saturation voltage VBE(sat)
940
1050
mV I = 3A, I = 300mA(*)
C
B
Base-emitter turn-on voltage
VBE(on)
890
1000
mV I = 3A, V = 2V(*)
C
CE
Static forward current transfer
ratio
hFE
100
200
300
50
85
IC = 1A, VCE = 2V(*)
20
IC = 3A, VCE = 2V(*)
Transition frequency
fT
160
Output capacitance
COBO
9.4
Delay time
t(d)
Rise time
IC = 10mA, VCE = 2V(*)
MHz IC = 100mA, VCE = 5V
f = 100MHz
20
pF
VCB = 10V, f = 1MHz(*)
16
ns
t(r)
55
ns
VCC = 10V. IC = 500mA,
IB1 = IB2= 50mA.
Storage time
t(s)
677
ns
Fall time
t(f)
95
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
Issue 1 - May 2006
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ZXTN25100BFH
Typical characteristics
Issue 1 - May 2006
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ZXTN25100BFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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United Kingdom
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Fax: (49) 89 45 49 49 49
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asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
6
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