DIODES ZXT1053AK

ZXT1053AK
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
SUMMARY
BVCEO = 75V : RSAT = 70m
typical; IC = 5A
DESCRIPTION
Packaged in the D-Pak outline this high current high gain 75V NPN transistor
offers low on state losses making it ideal for use in DC-DC circuits and various
driving and power management functions.
FEATURES
DPAK
• 5 amps continuous current
• Up to 10 amps peak current
• Low equivalent on resistance
• Low saturation voltages
• High hFE (300 min @ 1A)
APPLICATIONS
• DC - DC converters
• DC - DC modules
• Power switches
• Motor control
• Automotive circuits
• Inverter circuits
PINOUT
ORDERING INFORMATION
DEVICE
ZXT1053AKTC
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
13”
16mm
2500 units
DEVICE MARKING
TOP VIEW
• ZXT1053A
ISSUE 2 - DECEMBER 2003
1
SEMICONDUCTORS
ZXT1053AK
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
150
Collector-emitter voltage
BV CEO
75
V
Emitter-base voltage
BV EBO
7
V
Continuous collector current (b)
IC
5
A
Peak pulse current
I CM
10
A
Power dissipation at T A =25°C (a)
PD
2.1
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
16.8
mW/°C
PD
Power dissipation at T A =25°C (c)
Linear derating factor
PD
Operating and storage temperature range
T j , T stg
3.4
W
27.4
mW/°C
4.4
W
9.3
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
VALUE
UNIT
R ⍜JA
59
°C/W
R ⍜JA
36
°C/W
R ⍜JA
28
°C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
2
ZXT1053AK
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2003
3
SEMICONDUCTORS
ZXT1053AK
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
150
240
MAX. UNIT CONDITIONS
V
I C =100␮A
Collector-emitter breakdown voltage
BV CES
150
240
V
I C =100␮A
Collector-emitter breakdown voltage
BV CEO
75
90
V
I C =10mA*
Collector-emitter breakdown voltage
BV CEV
150
240
V
Emitter-base breakdown voltage
BV EBO
7
8.7
I C =1␮A, V EB =1V
I E =100␮A
Collector cut-off current
I CBO
⬍1
10
nA
V CB =120V
V
Collector cut-off current
I CES
⬍1
10
nA
V CES =120V
Emitter cut-off current
I EBO
⬍1
10
nA
V EB =6V
Collector-emitter saturation voltage
V CE(SAT)
19
30
mV
I C =0.2A, I B =20mA*
70
95
mV
IC=1A, IB=100mA*
120
160
mV
IC=1A, IB=10mA*
140
190
mV
IC=2A, IB=100mA*
IC=5A, IB=200mA*
350
460
mV
Base-emitter saturation voltage
V BE(SAT)
1.0
1.1
mV
I C =5A, I B =200mA*
Base-emitter turn-on voltage
V BE(ON)
0.925
1.05
mV
I C =5A, V CE =2V*
Static forward current transfer ratio
H FE
Transition frequency
fT
Output capacitance
C OBO
Switching times
t ON
t OFF
260
375
300
450
I C =10mA, V CE =2V*
50
75
IC=5A, VCE=2V*
10
25
IC=10A, VCE=2V*
IC=1A, VCE=2V*
1200
140
MHz I C =50mA, V CE =10V
f=100MHz
21
30
pF
V CB =10V, f=1MHz*
162
nS
900
nS
I C =2A, V CC =50V,
I B1 =I B2 =20mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
4
ZXT1053AK
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2003
5
SEMICONDUCTORS
ZXT1053AK
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters
Inches
DIM
Millimeters
Min
Max
Inches
Min
Max
Min
Max
A
2.18
2.38
0.086
0.094
e
A1
ᎏ
0.127
0.005
H
9.40
10.41
0.370
0.410
b
0.635
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.762
1.114
0.030
0.045
L1
2.30 BSC
2.74 REF
Max
0.090 BSC
0.108 REF
b3
5.20
5.46
0.205
0.215
L2
c
0.457
0.609
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.457
0.584
0.018
0.023
L4
0.635
1.01
0.025
0.040
0.245
0.060
D
5.97
6.22
0.235
D1
5.20
ᎏ
0.205
E
6.35
6.73
0.250
E1
4.32
ᎏ
0.170
0.265
0.051 BSC
Min
0.020 BSC
L5
1.14
1.52
0.045
⍜1⬚
0⬚
10⬚
0⬚
10⬚
⍜⬚
0⬚
15⬚
0⬚
15⬚
© Zetex plc 2003
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ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
6