DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V • 12mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability • • • • • • SO-8 Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 3) ID IDM Value 20 ±12 12 9.6 42 Units V V A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 2 62.5 -55 to +150 Unit W °C/W °C 1. Device mounted on 2 oz, FR-4 PCB, with RθJA = 62.5°C/W 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN2009LSS Document number: DS31409 Rev. 6- 2 1 of 5 www.diodes.com June 2010 © Diodes Incorporated DMN2009LSS Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 ⎯ 1.2 V ⎯ ⎯ ⎯ 8 9 12 mΩ VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VGS = 2.5V, ID = 8A VDS = 5V, ID = 6.5A VGS = 0V, IS = 3A Static Drain-Source On-Resistance RDS (ON) ⎯ Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS gfs VSD ⎯ 0.5 27 0.7 ⎯ 1.2 S V Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 2555 523 496 1.1 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Total Gate Charge Qg ⎯ 28.9 58.3 ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd ⎯ ⎯ 3.7 11.4 ⎯ ⎯ Notes: 5. nC Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = 10V, VGS = 4.5V, ID = 12A VDS = 10V, VGS = 10V, ID = 12A VDS = 10V, VGS = 10V, ID = 12A VDS = 10V, VGS = 10V, ID = 12A Short duration pulse test used to minimize self-heating effect. 30 30 VGS = 10V VGS = 4.5V 25 VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 20 VGS = 3.0V VGS = 2.5V 15 10 VGS = 1.5V 5 VDS = 10V 20 15 10 TA = 150°C TA = 125°C TA = 85°C 5 T A = 25°C TA = -55°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2009LSS Document number: DS31409 Rev. 6- 2 5 0 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE SOURCE VOLTAGE (V) 1.6 Fig. 2 Typical Transfer Characteristics 2 of 5 www.diodes.com June 2010 © Diodes Incorporated 0.015 1.4 1.3 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (Ω) DMN2009LSS VGS = 2.5V ID = 8A 0.01 VGS = 4.5V ID = 10A VGS = 10V ID = 12A 0.005 VGS = 10V ID = 12A 1.1 VGS = 2.5V ID = 8A 1.0 0.9 0.8 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 3 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 On-Resistance Variation with Temperature 10,000 1.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) C, CAPACITANCE (pF) VGS = 4.5V ID = 10A 1.2 Ciss 1,000 Coss Crss 0.8 0.6 0.4 0.2 100 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 20 ID = 250µA 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 100 IS, SOURCE CURRENT (A) 10 1 T A = 150°C TA = 125°C 0.1 T A = 85°C 0.01 TA = 25°C TA = -55°C 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current DMN2009LSS Document number: DS31409 Rev. 6- 2 1 3 of 5 www.diodes.com June 2010 © Diodes Incorporated DMN2009LSS r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 99°C/W D = 0.02 0.01 P(pk) D = 0.01 D = Single Pulse 0.001 0.0001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 8 Transient Thermal Response Ordering Information (Note 6) Part Number DMN2009LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N2009LS Part no. YY WW 1 Xth week: 01~53 Year : "07" =2007 "08" =2008 4 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° A2 A A3 Detail ‘A’ b e D DMN2009LSS Document number: DS31409 Rev. 6- 2 4 of 5 www.diodes.com SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm June 2010 © Diodes Incorporated DMN2009LSS Suggested Pad Layout X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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