Fairchild BSR18B Pnp general purpose amplifier Datasheet

BSR18B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
Sourced from Process 23.
Marking
3
T93
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
* Ta = 25°C unless otherwise noted
Value
Units
VCBO
Collector-Base Voltage
Parameter
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current (DC)
200
mA
TJ, TSTG
Junction Temperature, Storage Temperature
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
R θ JA
* Ta = 25°C unless otherwise noted
Characteristic
Max
Units
Total Device Dissipation
230
Derate above 25℃
1.84
mW
mW/℃
Thermal Resistance, Junction to Ambient
550
℃/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
©2007 Fairchild Semiconductor Corporation
Rev. A
1
www.fairchildsemi.com
PNP General Purpose Amplifier
June 2007
Symbol
* Ta = 25°C unless otherwise noted
Parameter
Test Condition
MIN
MAX
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 μA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
5.0
ICBO
Collector-Cutoff Current
VCB = 30 V
50
nA
IEBO
Emitter-Cutoff Current
VCE = 30 V, VEB = 3.0 V
50
nA
V
On Characteristics
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
VCE(sat)
Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
VBE(sat)
Emitter-Base Breakdown Voltage *
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
60
80
110
60
30
0.65
220
0.25
0.4
V
V
0.85
0.95
V
V
Small Signal Characteristics
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.5
pF
Ceb
Emitter-Base Capacitance
VEB = 0.5 V, IC = 0, f = 100 kHz
10
pF
IC = 10 mA, IB1 = 1.0 mA,Vcc= 3.0 V
35
ns
35
pF
Switching Characteristics
td
Delay Time
tr
Rise Time
ts
Storage Time
IC = 10 mA, IBon = IBoff = 1.0 mA
225
ns
tf
Fall Time
Vcc= 3.0 V
75
ns
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Performance Characteristics
2
BSR18B Rev. A
www.fairchildsemi.com
BSR18B PNP General Purpose Amplifier
Electrical Characteristics
BSR18B PNP General Purpose Amplifier
Typical Performance Characteristics (continued)
3
BSR18B Rev. A
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Rev. I23
4
BSR18B Rev. A
www.fairchildsemi.com
BSR18B PNP General Purpose Amplifier
tm
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