Infineon BCV62B Pnp silicon double transistor Datasheet

BCV62
PNP Silicon Double Transistor
3
To be used as a current mirror
Good thermal coupling and VBE matching
4
High current gain
Low collector-emitter saturation voltage
2
C2 (1)
C1 (2)
1
Tr.1
VPS05178
Tr.2
E1 (3)
E2 (4)
EHA00013
Type
Marking
Pin Configuration
Package
BCV62A
3Js
1 = C2
2 = C1
3 = E1
4 = E2
SOT143
BCV62B
3Ks
1 = C2
2 = C1
3 = E1
4 = E2
SOT143
BCV62C
3Ls
1 = C2
2 = C1
3 = E1
4 = E2
SOT143
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
30
VCBO
30
6
DC collector current
VEBS
IC
100
Peak collector current
ICM
200
Base peak current (transistor T1)
IBM
200
Total power dissipation, TS = 99 °C
Ptot
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
170
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jul-11-2001
BCV62
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
30
-
-
V(BR)CBO
30
-
-
V(BR)EBO
6
-
-
ICBO
-
-
15
nA
ICBO
-
-
5
µA
hFE
100
-
-
-
BCV62A
125
180
220
BCV62B
220
290
475
BCV62C
420
520
800
DC Characteristics of T1
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 0.1 mA, VCE = 5 V
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE
Collector-emitter saturation voltage1)
VCEsat
mV
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
Base-emitter voltage 1)
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
Base-emitter saturation voltage 1)
VBEsat
VBE(ON)
1) Pulse test: t ≤ 300µs, D = 2%
2
Jul-11-2001
BCV62
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Base-emitter forward voltage
V
VBES
IE = 10 µA
IE = 250 mA
Matching of transistor T1 and transistor T2
0.4
-
-
-
-
1.8
-
IC1 / IC2
at IE2 = 0.5mA and VCE1 = 5V
-
-
-
TA = 25 °C
0.7
-
1.3
TA = 150 °C
0.7
-
1.3
IE2
-
5
-
mA
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
F
-
2
-
dB
h11e
-
4.5
-
k
h12e
-
2
-
10-4
h21e
100
-
900
h22e
-
30
-
Thermal coupling of transistor T1 and
transistor T2 1)
T1: VCE = 5V
Maximum current of thermal stability of IC1
AC characteristics of transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 1 kHz, f = 200 Hz
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
-
S
IC = 1 mA, VCE = 10 V, f = 1 kHz
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
3
Jul-11-2001
BCV62
Test circuit for current matching
A
Ι C1
VCE1 ...
2
T1
1
Ι E2 = constant
T2
3
4
VCO
VCO
EHN00003
Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV
Characteristic for determination of VCE1 at specified RE range with
IE2 as parameter under condition of IC1/IE2 = 1.3
A
Ι C1
VCE1 ...
2
T1
1
Ι E2 = constant
T2
3
RE
4
RE
EHN00004
Note: BCV62 with emitter resistors
4
Jul-11-2001
BCV62
Total power dissipation Ptot = f(TS)
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10 3
350
BCV 62
EHP00941
Ptot max
5
Ptot DC
mW
D=
tp
T
tp
T
250
P tot
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
200
150
10 1
100
5
50
0
0
15
30
45
60
75
90 105 120
10 0 -6
10
°C 150
TS
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
Jul-11-2001
Similar pages