ON MMBT3904WT1G General purpose transistor Datasheet

MMBT3904WT1, NPN
MMBT3906WT1, PNP
General Purpose
Transistors
NPN and PNP Silicon
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These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
COLLECTOR
3
Features
1
BASE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBT3904WT1
MMBT3906WT1
VCEO
Collector −Base Voltage
VCBO
Emitter −Base Voltage
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
Collector Current − Continuous
MMBT3904WT1
MMBT3906WT1
VEBO
IC
Value
Unit
Vdc
40
−40
Total Device Dissipation (Note 1)
@TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
SC−70 (SOT−323)
CASE 419
STYLE 3
1
2
Vdc
60
−40
MARKING DIAGRAM
Vdc
6.0
−5.0
xx M G
G
mAdc
200
−200
1
xx
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
= AM for MMBT3904WT1
= 2A for MMBT3906WT1
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904WT1G
SC−70/
3000/Tape & Reel
SOT−323
(Pb−Free)
MMBT3906WT1G
SC−70/
3000/Tape & Reel
SOT−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 7
1
Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1, NPN MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−40
−
−
60
−40
−
−
6.0
−5.0
−
−
−
−
50
−50
−
−
50
−50
40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
−
−
−
0.2
0.3
−0.25
−0.4
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
MMBT3904WT1
MMBT3906WT1
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
MMBT3904WT1
MMBT3906WT1
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
MMBT3904WT1
MMBT3906WT1
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
MMBT3904WT1
hFE
MMBT3906WT1
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
MMBT3904WT1
VCE(sat)
MMBT3906WT1
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
MMBT3904WT1
MMBT3906WT1
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
VBE(sat)
−
Vdc
Vdc
MMBT3904WT1, NPN MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
Unit
300
250
−
−
−
−
4.0
4.5
−
−
8.0
10.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
−
−
5.0
4.0
Symbol
Min
Max
Unit
ns
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
MMBT3904WT1
MMBT3906WT1
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
MHz
pF
pF
kW
X 10− 4
−
mmhos
dB
SWITCHING CHARACTERISTICS
Condition
Characteristic
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
td
−
−
35
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = −10 mAdc, IB1 = −1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
tr
−
−
35
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = −3.0 Vdc, IC = −10 mAdc)
MMBT3904WT1
MMBT3906WT1
ts
−
−
200
225
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = −1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
tf
−
−
50
75
ns
MMBT3904WT1
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
-0.5 V
CS < 4 pF*
< 1 ns
1N916
-9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
CS < 4 pF*
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
500
500
IC/IB = 10
200
100
70
50
tr @ VCC = 3.0 V
30
20
40 V
10
7
5
VCC = 40 V
IC/IB = 10
300
15 V
MMBT3904WT1
5.0 7.0 10
2.0 3.0
20
50 70 100
30
100
70
50
30
20
10
7
5
2.0 V
td @ VOB = 0 V
1.0
t r, RISE TIME (ns)
TIME (ns)
300
200
200
MMBT3904WT1
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn −On Time
20
50 70 100
30
200
Figure 4. Rise Time
500
500
300
200
IC/IB = 20
t′s = ts - 1/8 tf
IB1 = IB2
IC/IB = 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
100
70
50
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC/IB = 20
IC/IB = 10
30
20
10
7
5
2.0 3.0
5.0 7.0 10
20
50 70 100
30
IC/IB = 10
30
20
10
7
5
MMBT3904WT1
1.0
100
70
50
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
50 70 100
30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
Figure 6. Fall Time
200
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
MMBT3904WT1
4.0
10
20
40
MMBT3904WT1
0
0.1
100
f, FREQUENCY (kHz)
0.2
0.4
1.0
2.0
4.0
10
20
RS, SOURCE RESISTANCE (k OHMS)
Figure 7. Noise Figure
Figure 8. Noise Figure
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4
40
100
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
hoe, OUTPUT ADMITTANCE (m mhos)
100
MMBT3904WT1
h fe , CURRENT GAIN
200
100
70
50
MMBT3904WT1
50
20
10
5
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
10
5.0
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
20
h ie , INPUT IMPEDANCE (k OHMS)
5.0
Figure 10. Output Admittance
Figure 9. Current Gain
MMBT3904WT1
10
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
7.0
MMBT3904WT1
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 11. Input Impedance
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
VCE = 1 V
TJ = 150°C
25°C
-55°C
100
MMBT3904WT1
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
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5
1000
MMBT3904WT1, NPN MMBT3906WT1, PNP
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
MMBT3904WT1
1.0
TJ = 25°C
MMBT3904WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.2
0.1
0.07
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.4
IC/IB = 10
IC/IB = 10
0.7
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.8
150°C
25°C
0.6
0.5
0.4
−55°C
0.3
0.2
0.1
0
0.001
0.01
0.1
1.2
1.0
25°C
0.6
150°C
0.4
0.2
1
−55°C
0.8
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.9
1.4
VCE = 1 V
1.2
1.0
0.8
0.6
0.4
0.2
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 17. Base Emitter Voltage vs. Collector
Current
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6
1
1
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
TJ = 25°C
TJ = 125°C
1.0
10
MMBT3904WT1
MMBT3904WT1
qVC FOR VCE(sat)
0
CAPACITANCE (pF)
COEFFICIENT (mV/ °C)
7.0
+25°C TO +125°C
0.5
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
Cobo
qVB FOR VBE(sat)
-1.5
0
20
40
60
80
100
120
140
1.0
0.1
180 200
160
0.5 0.7 1.0
5.0 7.0 10
Figure 18. Temperature Coefficients
Figure 19. Capacitance
1
IC, COLLECTOR CURRENT (A)
100
0.1
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
VCE = 1 V
TA = 25°C
10
0.2 0.3
IC, COLLECTOR CURRENT (mA)
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
Cibo
3.0
2.0
+25°C TO +125°C
-2.0
5.0
1
10
100
1000
20 30 40
100 mS 10 mS
1 mS
1S
0.1
Thermal Limit
0.01
0.001
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
Figure 21. Safe Operating Area
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7
100
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
10 k
0
CS < 4 pF*
+10.6 V
300 ns
10 < t1 < 500 ms
DUTY CYCLE = 2%
CS < 4 pF*
1N916
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
500
500
300
200
IC/IB = 10
MMBT3906WT1
MMBT3906WT1
300
200
VCC = 40 V
IB1 = IB2
t f , FALL TIME (ns)
IC/IB = 20
TIME (ns)
100
70
50
tr @ VCC = 3.0 V
30
20
10
7
5
15 V
40 V
2.0 V
2.0 3.0
5.0 7.0 10
20
30
50 70 100
70
50
200
IC/IB = 10
30
20
10
7
5
td @ VOB = 0 V
1.0
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 24. Turn −On Time
Figure 25. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
NF, NOISE FIGURE (dB)
4.0
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
1.0
0
0.1
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8.0
6.0
4.0
IC = 50 mA
2.0
IC = 100 mA
MMBT3906WT1
20
40
MMBT3906WT1
0
0.1
100
0.2
0.4
1.0
2.0
4.0
10
RS, SOURCE RESISTANCE (kW)
Figure 26.
Figure 27.
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8
20
40
100
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
MMBT3906WT1
hfe , CURRENT GAIN
200
100
70
50
70
MMBT3906WT1
50
30
20
10
7.0
5.0
30
0.1
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
0.2
5.0 7.0 10
0.1
0.2
Figure 28. Current Gain
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
MMBT3906WT1
10
h ie , INPUT IMPEDANCE (k Ω)
5.0 7.0
Figure 29. Output Admittance
20
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (mA)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
MMBT3906WT1
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 30. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
Figure 31. Voltage Feedback Ratio
STATIC CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
VCE = 1 V
TJ = 150°C
25°C
100
-55°C
MMBT3906WT1
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 32. DC Current Gain
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9
1000
MMBT3904WT1, NPN MMBT3906WT1, PNP
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
MMBT3906WT1
1.0
TJ = 25°C
MMBT3906WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.1
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 33. Collector Saturation Region
1.4
IC/IB = 10
IC/IB = 10
150°C
0.40
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.45
0.35
25°C
0.30
0.25
−55°C
0.20
0.15
0.10
0.05
0
0.001
0.01
0.1
1
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.50
1.4
VCE = 1 V
1.2
1.0
0.8
−55°C
25°C
0.6
0.4
0.2
150°C
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 36. Base Emitter Voltage vs. Collector
Current
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10
1
1
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
10
1.0
MMBT3906WT1
7.0
0.5
qVC FOR VCE(sat)
+25°C TO +125°C
CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
TJ = 125°C
-55°C TO +25°C
0
-0.5
MMBT3906WT1
+25°C TO +125°C
-1.0
qVS FOR VBE(sat)
-55°C TO +25°C
5.0
Cobo
Cibo
3.0
2.0
-1.5
-2.0
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
1.0
0.1
180 200
160
1
IC, COLLECTOR CURRENT (A)
VCE = 1 V
TA = 25°C
100
0.1
1
10
2.0 3.0
5.0 7.0 10
20 30 40
Figure 38. Capacitance
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
0.5 0.7 1.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Temperature Coefficients
10
0.2 0.3
100
1000
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Current Gain Bandwidth Product
vs. Collector Current
Figure 40. Safe Operating Area
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100
MMBT3904WT1, NPN MMBT3906WT1, PNP
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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MMBT3904WT1/D
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