Microsemi JANTX2N5151 Pnp power silicon transistor Datasheet

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
DEVICES
LEVELS
2N5151
2N5151L
2N5151U3
2N5153
2N5153L
2N5153U3
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
5.5
Vdc
IC
2.0
Adc
Collector Current
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TA = +25°C (3)
@ TC = +25°C (4)
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
Note:
1)
2)
3)
4)
1.0
10
1.16
100
PT
W
TJ , Tstg
-65 to +200
°C
RθJC
10
1.75 (U3)
°C/W
TO-5
2N5151L, 2N5153L
(See Figure 1)
Derate linearly 5.7mW/°C for TA > +25°
Derate linearly 66.7mW/°C for TA > +25°
Derate linearly 6.63mW/°C for TA > +25°
Derate linearly 571mW/°C for TA > +25°
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
V(BR)CEO
80
Max.
Unit
TO-39 (TO-205AD)
2N5151, 2N5153
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0
Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
VEB = 5.5Vdc, IC = 0
IEBO
1.0
1.0
µAdc
mAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0
VCE = 100Vdc, VBE = 0
ICES
1.0
1.0
µAdc
mAdc
Collector-Base Cutoff Current
VCE = 40Vdc, IB = 0
ICEO
50
µAdc
T4-LDS-0132 Rev. 1 (091476)
U-3
2N5151U3, 2N5153U3
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5Vdc
Symbol
2N5151
2N5153
IC = 2.5Adc, VCE = 5Vdc
2N5151
2N5153
IC = 5Adc, VCE = 5Vdc
2N5151
2N5153
Min.
Max.
Unit
20
50
hFE
30
70
90
200
20
40
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
VCE(sat)
0.75
1.5
Vdc
Base-Emitter Voltage Non-Saturation
IC = 2.5Adc, VCE = 5Vdc
VBE
1.45
Vdc
VBE(sat)
1.45
2.2
Vdc
250
pF
Max.
Unit
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500mAdc, VCE = 5Vdc, f = 10MHz
2N5151
2N5153
Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 1kHz
2N5151
2N5153
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
|hfe|
6
7
hfe
20
50
Cobo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Turn-On Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
ton
0.5
μs
Turn-Off Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
toff
1.5
μs
T4-LDS-0132 Rev. 1 (091476)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
SWITCHING CHARACTERISTICS (cont.)
Parameters / Test Conditions
Symbol
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
Storage Time
Fall Time
Min.
Max.
Unit
ts
1.4
μs
tf
0.5
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, tP = 1.0s
Test 1
VCE = 5.0Vdc, IC = 2.0Adc
Test 2
VCE = 32Vdc, IC = 310mAdc
Test 3
VCE = 80Vdc, IC = 14.5mAdc
FIGURE 1 (TO-5, TO-39)
PACKAGE DIMENSIONS
Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
LD
LL
LU
.200 TP
.016
0.41
0.53
6
7
8, 9
See notes 8, 9, 12, 13
.016
L1
L2
.021
5.08 TP
Notes
.019
0.41
.050
.250
Q
0.48
1.27
6.35
.050
8, 9
8, 9
8, 9
1.27
6
TL
.029
.045
0.74
1.14
4, 5
TW
.028
.034
0.71
0.86
3
0.25
11
r
α
P
.010
45° TP
.100
45° TP
7
2.54
T4-LDS-0132 Rev. 1 (091476)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
NOTES:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
TL measured from maximum HD.
Outline in this zone is not controlled.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
All three leads.
The collector shall be electrically and mechanically connected to the case.
r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum.
For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum.
Lead designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 =
collector.
FIGURE 2 (U3)
PACKAGE DIMMENSIONS
Dimensions
Symbol
Millimeters
Inches
Min
Max
Min
Max
BL
.395
.405
10.04
10.28
BW
.291
.301
7.40
7.64
CH
.1085
.1205
2.76
3.06
LH
.010
.020
0.25
0.51
LL1
.220
.230
5.59
5.84
LL2
.115
.125
2.93
3.17
LS1
.150 BSC
3.81 BSC
LS2
.075 BSC
1.91 BSC
LW1
.281
.291
7.14
7.39
LW2
.090
.100
2.29
2.54
Q1
.030
0.762
Q2
.030
0.762
NOTES:
1
2
3
Dimensions are in inches.
Millimeters are given for general information only.
Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter
T4-LDS-0132 Rev. 1 (091476)
Page 4 of 4
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