ON MAC210A10 Triacs silicon bidirectional thyristor Datasheet

MAC210A8, MAC210A10
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
http://onsemi.com
TRIACS
10 AMPERES RMS
600 thru 800 VOLTS
Features
• Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
• Small, Rugged, Thermowatt Construction for Low Thermal
•
•
MT1
G
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in Four Modes (Quadrants)
Pb−Free Packages are Available*
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +125°C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC210A8
MAC210A10
VDRM,
VRRM
On−State RMS Current (TC = +70°C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
Peak Non−Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
Circuit Fusing Considerations, (t = 8.3 ms)
Peak Gate Power
(TC = +70°C, Pulse Width = 10 ms)
Average Gate Power
(TC = +70°C, t = 8.3 ms)
Peak Gate Current
(TC = +70°C, Pulse Width = 10 ms)
Value
Unit
V
MAC210AxG
AYWW
600
800
10
A
1
ITSM
100
A
I2t
40
A2s
PGM
20
W
PG(AV)
0.35
W
IGM
2.0
A
2
TO−220AB
CASE 221A−07
STYLE 4
3
x
A
Y
WW
G
= 8 or 10
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
Operating Junction Temperature Range
TJ
−40 to +125
°C
2
Main Terminal 2
Storage Temperature Range
Tstg
−40 to +150
°C
3
Gate
4
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
ORDERING INFORMATION
Device
Package
Shipping
MAC210A8
TO−220AB
500 Units/Box
MAC210A8G
TO−220AB
(Pb−Free)
500 Units/Box
MAC210A10
TO−220AB
500 Units/Box
MAC210A10G
TO−220AB
(Pb−Free)
500 Units/Box
Publication Order Number:
MAC210A8/D
MAC210A8, MAC210A10
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.0
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
2.0
mA
mA
−
1.2
1.65
V
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak On-State Voltage
(ITM = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
VTM
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IGT
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants
mA
−
−
−
−
12
12
20
35
50
50
50
75
V
−
−
−
−
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
VGD
0.2
−
−
V
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA, TC = +25°C)
IH
−
6.0
50
mA
Turn-On Time
(Rated VDRM, ITM = 14 A)
(IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt
−
1.5
−
ms
dv/dt(c)
−
5.0
−
V/ms
dv/dt
−
100
−
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70°C)
http://onsemi.com
2
MAC210A8, MAC210A10
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
+ Voltage
IDRM at VDRM
14.0
P (AV) , AVERAGE POWER DISSIPATION
130
CONDUCTION ANGLE = 360°
10.0
110
100
90
80
70
8.0
6.0
4.0
2.0
0
2.0 3.0
4.0
5.0 6.0 7.0
8.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
1.0
9.0
10.0
0
1.0
2.0 3.0
4.0
5.0 6.0 7.0
8.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. Current Derating
100
10.0
100
50
20
10
5.0
2.0
9.0
Figure 2. Power Dissipation
ITSM , PEAK SURGE CURRENT (AMP)
0
TJ = 25°C
TJ = 125°C
80
60
CYCLE
40
TC = 70°C
f = 60 Hz
Surge is preceded and followed by rated current
20
0
1.0
1.0
2.0
0.5
3.0
5.0
7.0
10
NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
60
CONDUCTION ANGLE = 360°
12.0
120
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
MAC210A8, MAC210A10
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Maximum On−State Characteristics
2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
−60
−40
0
40
−20
20
TC, CASE TEMPERATURE (°C)
60
Figure 5. Typical Gate Trigger Voltage
http://onsemi.com
4
80
2.8
2.0
IH , HOLDING CURRENT (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
MAC210A8, MAC210A10
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
2.4
1.6
1.2
0.8
0.4
0
−60
80
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
−40
TC, CASE TEMPERATURE (°C)
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
−20
Figure 7. Typical Holding Current
1.0
0.5
0.2
ZqJC(t) = r(t) • RqJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
t, TIME (ms)
Figure 8. Thermal Response
http://onsemi.com
5
200
500
1.0 k
2.0 k
5.0 k
10 k
MAC210A8, MAC210A10
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
A
1 2 3
U
H
K
Z
R
L
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
For additional information, please contact your
local Sales Representative.
MAC210A8/D
Similar pages