Anpec APM4461KC-TR P-channel enhancement mode mosfet Datasheet

APM4461
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-20V/-7A, RDS(ON) = 25mΩ(typ.) @ VGS = -10V
S
1
8
D
S
2
7
D
Super High Density Cell Design
S
3
6
D
Reliable and Rugged
G
4
5
D
RDS(ON) = 35mΩ(typ.) @ VGS = -4.5V
RDS(ON) = 55mΩ(typ.) @ VGS = -2.5V
•
•
•
SOP-8 Package
SO − 8
S
S S
Applications
•
Power Management in Notebook Computer,
G
Portable Equipment and Battery Powered
Systems
D D D D
P-Channel MOSFET
Ordering and Marking Information
APM 4461
Package Code
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TR : Tape & R eel
H a n d lin g C o d e
Tem p. Range
Package Code
AP M 4461 K :
AP M 4461
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±20
ID*
Maximum Drain Current – Continuous
-7
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
1
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APM4461
Absolute Maximum Ratings (Cont.)
Symbol
Parameter
IDM
Maximum Drain Current – Pulsed
PD
Maximum Power Dissipation
TJ
Thermal Resistance – Junction to Ambient
Test Condition
Drain-Source Breakdown Voltage VGS=0V , IDS=-250A
Zero Gate Voltage Drain Current
Gate Threshold Voltage
IGSS
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
SD
V
Diode Forward Voltage
W
150
ºC
-55 to 150
ºC
50
ºC/W
(TA = 25°C unless otherwise noted)
Parameter
IDSS
VGS(th)
A
1.0
R θJA
Static
BVDSS
-25
TA=100 ºC
Storage Temperature Range
Symbol
Unit
2.5
Maximum Junction Temperature
Electrical Characteristics
Rating
TA=25 ºC
TSTG
RDS(ON)
(TA = 25°C unless otherwise noted)
APM4461
Min.
Typ.
-20
-1
-0.6
-1.5
µA
V
±100
nA
VGS=-10V , IDS=-7A
25
35
VGS=-4.5V , IDS=-4A
35
50
VGS=-2.5V , IDS=-2A
55
65
ISD=-2A, VGS=0V
Unit
V
VDS=-24V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±20V , VDS=0V
Max.
-0.7
-1.3
m[
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
VDS=-10V , VGS=-4.5V,
IDS=-2A
17.8
21
nC
4
5.2
Tr
Turn-on Rise Time
VDD=-10V , IDS=-2A ,
td(OFF)
Turn-off Delay Time
VGEN=-4.5 V , RG=0.2Ω
10
15
15
20
32
26
15
25
Tf
Turn-off Fall Time
Ciss
Input Capacitance
VGS=0V
1240
Coss
Output Capacitance
VDS=-15V
340
Crss
Reverse Transfer Capacitance
Frequency=1.0MHz
216
ns
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
2
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APM4461
Typical Characteristics
Output Characteristics
Transfer Characteristics
25
25
-VGS=3,4,5,6,7,8,9,10V
20
-ID-Drain Current (A)
-ID-Drain Current (A)
20
TJ=25°C
15
15
10
10
-V GS=2V
5
TJ=125°C
5
TJ=-55°C
0
0
1
2
3
4
0
0.0
5
-VDS-Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
3.5
On-Resistance vs. Drain Current
1.75
0.06
-IDS=250µA
1.50
RDS(ON)-On-Resistance (Ω)
-VGS(th)-Threshold Voltage (V)
(Normalized)
1.0
-VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.25
1.00
0.75
0.50
0.25
0.00
-50
0.5
-25
0
25
50
75
0.04
-VGS=4.5V
0.03
-V GS=10V
0.02
0.01
0.00
100 125 150
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
0.05
0
5
10
15
20
25
-IDS-Drain Current (A)
3
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APM4461
Typical Characteristics (Cont.)
On-Resistaence vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
1.8
0.30
-VGS=10V
-IDS=7A
RDS(ON)-On Resistance (Ω)
(Normalized)
RDS (ON)-On-Resistance (Ω)
-IDS=7A
0.25
0.20
0.15
0.10
0.05
0.00
1
2
3
4
5
6
7
8
9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
10
-VGSj-Gate-to-Source Voltage (V)
0
25
50
75
100 125 150
Tj-Junction Temperature (°C)
Capacitance Characteristics
Gate Charge
1800
10
-VDS=10V
-IDS=2A
Frequency=1MHz
1600
8
1400
C-Capacitance (pF)
-VGS-Gate-to-Source Voltage (V)
-25
6
4
2
Ciss
1200
1000
800
600
Coss
400
Crss
200
0
0
5
10
15
20
25
30
0
35
QG-Total Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
0
5
10
15
20
-VDS-Drain-to-Source Voltage (V)
4
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APM4461
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
25
60
10
Power (W)
-IS-Source Current (A)
50
1
TJ=150°C
TJ=25°C
40
30
20
0.1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
1
-VSD-Source to Drain Voltage
10
30
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50°C/W
3. TJM-TA=PDMZthJA
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
5
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APM4461
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
1. 27B S C
0. 50B S C
8°
8°
6
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APM4461
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM4461
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
8
2.1± 0.1 0.3±0.013
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APM4461
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
9
www.anpec.com.tw
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