Central CPD26 Fast recovery rectifier 8 amp glass passivated rectifier chip Datasheet

PROCESS
CPD26
Central
Fast Recovery Rectifier
TM
Semiconductor Corp.
8 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
Die Size
98 x 98 MILS
Die Thickness
10.6 MILS
Anode Bonding Pad Area
82.5 x 82.5 MILS
Top Side Metalization
Au - 5,000Å
Back Side Metalization
Au - 2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,170
PRINCIPAL DEVICE TYPES
CR6AF1GPP Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
Central
TM
Semiconductor Corp.
CPD26
PROCESS
Typical Electrical Characteristics
The Typical Electrical Characteristics data
for this chip is currently being revised.
For the latest updated data for this Chip Process,
please visit our website at:
www.centralsemi.com/chip
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
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